Muaj ntau qhov sib txawv ntawm cov cim Circuit Court feem ntau siv rau MOSFETs. Cov qauv tsim feem ntau yog ib txoj kab ncaj nraim sawv cev rau cov channel, ob kab perpendicular rau cov channel uas sawv cev rau qhov chaw thiab ntws, thiab ib txoj kab luv luv mus rau lub channel ntawm sab laug sawv cev rau lub rooj vag. Qee zaum txoj kab ncaj nraim uas sawv cev rau cov channel kuj tau hloov los ntawm txoj kab tawg kom paub qhov txawv ntawm hom kev txhim khomosfet los yog depletion hom mosfet, uas kuj tau muab faib ua N-channel MOSFET thiab P-channel MOSFET ob hom Circuit Court cim raws li qhia hauv daim duab (cov kev taw qhia ntawm xub yog txawv).
Hwj chim MOSFETs ua haujlwm nyob rau hauv ob txoj hauv kev:
(1) Thaum qhov hluav taws xob zoo ntxiv rau D thiab S (drain zoo, qhov tsis zoo) thiab UGS = 0, PN kev sib tshuam hauv thaj tsam P lub cev thiab thaj av N ntws yog thim rov qab, thiab tsis muaj tam sim no dhau ntawm D thiab S. Yog hais tias muaj qhov zoo voltage UGS ntxiv ntawm G thiab S, tsis muaj lub rooj vag tam sim no yuav ntws vim lub rooj vag yog insulated, tab sis qhov zoo voltage ntawm lub rooj vag yuav thawb lub qhov deb ntawm P cheeb tsam hauv qab, thiab cov neeg nqa khoom tsawg yuav yuav tau attracted rau P cheeb tsam qhov chaw Thaum lub UGS yog ntau tshaj ib tug tej yam voltage UT, lub electron concentration nyob rau saum npoo ntawm lub P cheeb tsam nyob rau hauv lub rooj vag yuav tshaj lub qhov concentration, yog li ua rau P-type semiconductor antipattern txheej N-hom semiconductor ; txheej txheej antipattern no tsim N-hom channel ntawm qhov chaw thiab ntws, kom PN kev sib tshuam ploj mus, qhov chaw thiab cov dej ntws tawm, thiab cov dej ntws tam sim no los ntawm cov dej ntws. UT yog hu ua turn-on voltage lossis qhov pib voltage, thiab qhov ntau UGS tshaj UT, qhov conductive muaj peev xwm ntau dua, thiab qhov loj dua ID yog. Qhov ntau dua UGS tshaj UT, qhov muaj zog ntawm kev coj ua, qhov ntau dua tus ID.
(2) Thaum D, S ntxiv rau qhov tsis zoo hluav taws xob (qhov zoo, ntws tsis zoo), PN hlws ris yog rau pem hauv ntej biased, sib npaug rau sab hauv rov qab diode (tsis muaj cov lus teb ceev ceev), uas yog,MOSFET tsis muaj qhov thaiv rov qab muaj peev xwm, tuaj yeem suav tau tias yog cov khoom sib hloov pauv.
Los ntawmMOSFET Lub hauv paus ntsiab lus ntawm kev ua haujlwm tuaj yeem pom, nws qhov kev coj ua tsuas yog ib qho polarity nqa tau koom nrog hauv cov khoom siv hluav taws xob, yog li tseem hu ua unipolar transistor.MOSFET tsav feem ntau yog raws li cov khoom siv hluav taws xob IC thiab MOSFET tsis tau xaiv qhov tsim nyog Circuit Court, MOSFET feem ntau yog siv rau kev hloov pauv. fais fab mov tsav Circuit Court. Thaum tsim cov khoom siv hluav taws xob hloov hluav taws xob siv MOSFET, cov neeg feem coob xav txog qhov kev tawm tsam, qhov siab tshaj plaws, thiab qhov siab tshaj plaws tam sim no ntawm MOSFET. Txawm li cas los xij, tib neeg feem ntau tsuas yog xav txog cov xwm txheej no, kom lub voj voog ua haujlwm tau zoo, tab sis nws tsis yog ib qho kev tsim qauv zoo. Rau kev tsim kom ntxaws ntxiv, MOSFET tseem yuav tsum xav txog nws tus kheej cov ntaub ntawv parameter. Rau qhov tseeb MOSFET, nws txoj kev tsav tsheb, lub ncov tam sim no ntawm cov zis tawm, thiab lwm yam, yuav cuam tshuam rau kev hloov pauv ntawm MOSFET.
Post lub sij hawm: May-17-2024
