Koj paub ntau npaum li cas txog MOSFET tsis? OLUKEY tshuaj xyuas nws rau koj

"MOSFET" yog cov ntawv luv ntawm Hlau Oxide Semicoductor Field Effect Transistor. Nws yog cov cuab yeej ua los ntawm peb cov khoom: hlau, oxide (SiO2 lossis SiN) thiab semiconductor. MOSFET yog ib qho ntawm cov khoom siv yooj yim tshaj plaws hauv kev lag luam semiconductor. Seb nws yog nyob rau hauv IC tsim los yog board-theem Circuit Court daim ntawv thov, nws yog heev nthuav. Cov tsis tseem ceeb ntawm MOSFET suav nrog ID, IDM, VGSS, V(BR)DSS, RDS(on), VGS(th), thiab lwm yam. Koj puas paub cov no? OLUKEY Company, raws li winsok Taiwanese nruab nrab-rau-siab-kawg nruab nrab thiab qis-voltageMOSFETtus neeg muab kev pabcuam tus neeg sawv cev, muaj ib pab pawg tseem ceeb nrog ze li 20 xyoo ntawm kev paub los piav qhia rau koj paub meej txog ntau yam ntawm MOSFET!

Daim duab: WINSOK MOSFETWSG03N10 specification sheet

Kev piav qhia ntawm lub ntsiab lus ntawm MOSFET tsis

1. Cov tsis tshua muaj siab:

ID: Qhov siab tshaj qhov ntws tawm tam sim no. Nws hais txog qhov siab tshaj plaws tam sim no tso cai rau hla ntawm qhov ntws thiab qhov chaw thaum lub teb cuam tshuam transistor ua haujlwm ib txwm. Qhov kev khiav hauj lwm tam sim no ntawm lub teb cuam tshuam transistor yuav tsum tsis pub tshaj ID. Qhov kev ntsuas no txo qis thaum qhov sib txuas kub nce.

IDM: Qhov siab tshaj plaws ntawm cov dej ntws tawm tam sim no. Qhov kev ntsuas no yuav txo qis thaum qhov sib txuas qhov kub nce, uas cuam tshuam qhov cuam tshuam thiab tseem cuam tshuam rau lub sijhawm mem tes. Yog tias qhov ntsuas no tsawg dhau, lub kaw lus yuav muaj kev pheej hmoo ntawm kev tawg los ntawm tam sim no thaum kuaj OCP.

PD: Lub zog siab tshaj plaws dissipated. Nws hais txog qhov siab tshaj plaws ntws-qhov hluav taws xob dissipation tso cai yam tsis muaj kev cuam tshuam qhov kev ua tau zoo ntawm thaj chaw cuam tshuam transistor. Thaum siv, qhov tseeb siv hluav taws xob ntawm FET yuav tsum tsawg dua li ntawm PDSM thiab tawm ntawm cov npoo. Qhov kev ntsuas no feem ntau txo qis thaum qhov sib txuas kub nce

VDSS: Qhov dej ntws siab tshaj plaws tuaj yeem tiv taus qhov hluav taws xob. Qhov hluav taws xob ntws-qhov hluav taws xob thaum lub ntws ntws tam sim no nce mus txog tus nqi tshwj xeeb (surges sharply) nyob rau hauv ib qho kub thiab qhov rooj-qhov luv luv Circuit Court. Qhov dej-qhov hluav taws xob hauv qhov no tseem hu ua avalanche breakdown voltage. VDSS muaj qhov zoo kub coefficient. Ntawm -50 ° C, VDSS yog kwv yees li 90% ntawm qhov ntawd ntawm 25 ° C. Vim tias qhov nyiaj pub dawb feem ntau yog nyob rau hauv ib txwm tsim, avalanche breakdown voltage ntawm MOSFET yog ib txwm ntau dua li qhov nominal rated voltage.

OLUKEYCov lus qhia sov: Txhawm rau kom ntseeg tau cov khoom lag luam, raws li kev ua haujlwm tsis zoo, nws raug pom zoo tias qhov ua haujlwm voltage yuav tsum tsis pub tshaj 80 ~ 90% ntawm tus nqi ntsuas.

VGSS: Qhov siab tshaj plaws qhov rooj tiv thaiv hluav taws xob. Nws hais txog tus nqi VGS thaum qhov rov qab tam sim no ntawm lub rooj vag thiab qhov chaw pib nce sharply. Tshaj qhov nqi hluav taws xob no yuav ua rau dielectric tawg ntawm lub rooj vag oxide txheej, uas yog kev puas tsuaj thiab irreversible tawg.

TJ: Qhov siab tshaj plaws kev khiav hauj lwm qhov kub thiab txias. Nws feem ntau yog 150 ℃ lossis 175 ℃. Raws li kev ua haujlwm ntawm cov cuab yeej tsim, nws yog ib qho tsim nyog kom tsis txhob muaj qhov kub thiab txias thiab tawm ntawm qee qhov npoo.

TSTG: cia kub ntau yam

Ob qhov kev txwv no, TJ thiab TSTG, ntsuas qhov ntsuas kub ntawm qhov sib txuas tau tso cai los ntawm cov cuab yeej ua haujlwm thiab chaw cia khoom. Qhov ntsuas kub no yog teem kom ua tau raws li qhov yuav tsum tau ua ntawm lub neej ua haujlwm yam tsawg kawg nkaus. Yog tias lub cuab yeej tau ua haujlwm nyob rau hauv qhov ntsuas kub no, nws lub neej ua haujlwm yuav ntev heev.

2. Static parameters

MOSFET xeem tej yam kev mob feem ntau yog 2.5V, 4.5V, thiab 10V.

V(BR)DSS: Drain-source breakdown voltage. Nws hais txog qhov siab tshaj plaws ntws-qhov hluav taws xob uas lub teb cov nyhuv transistor tuaj yeem tiv taus thaum lub rooj vag-qhov voltage VGS yog 0. Qhov no yog qhov txwv tsis pub, thiab qhov kev khiav hauj lwm qhov hluav taws xob siv rau lub teb cov nyhuv transistor yuav tsum tsawg dua V (BR) DSS. Nws muaj qhov zoo ntawm qhov kub thiab txias. Yog li ntawd, tus nqi ntawm qhov ntsuas no nyob rau hauv qhov kub thiab txias yuav tsum tau ua raws li kev saib xyuas kev nyab xeeb.

△V(BR)DSS/△Tj: Kub coefficient ntawm ntws-qhov chaw tawg voltage, feem ntau 0.1V / ℃

RDS(on): Nyob rau hauv tej yam kev mob ntawm VGS (feem ntau yog 10V), hlws ris kub thiab ntws tam sim no, lub siab tshaj plaws tiv thaiv ntawm ntws thiab qhov chaw thaum lub MOSFET qhib. Nws yog ib qho tseem ceeb heev uas txiav txim siab lub hwj chim noj thaum lub MOSFET qhib. Qhov kev ntsuas no feem ntau nce raws li qhov kub ntawm qhov sib txuas nce. Yog li ntawd, tus nqi ntawm qhov ntsuas no ntawm qhov siab tshaj plaws kev khiav hauj lwm hlws ris kub yuav tsum tau siv rau xam qhov poob thiab voltage poob.

VGS(th): tig-on voltage (threshold voltage). Thaum lub rooj vag sab nraud tswj qhov hluav taws xob VGS tshaj VGS (th), cov txheej txheem inversion ntawm cov dej ntws thiab cov cheeb tsam hauv cheeb tsam tsim ib qho kev sib txuas. Hauv kev siv, lub rooj vag hluav taws xob thaum ID sib npaug li 1 mA nyob rau hauv qhov dej luv-circuit mob feem ntau hu ua qhov hluav taws xob tig. Qhov kev ntsuas no feem ntau txo qis thaum qhov sib txuas kub nce

IDSS: saturated ntws-qhov tam sim no, qhov ntws-qhov tam sim no thaum lub rooj vag voltage VGS = 0 thiab VDS yog ib qho nqi. Feem ntau ntawm qib microamp

IGSS: rooj vag-qhov chaw tsav tam sim no lossis rov qab tam sim no. Txij li thaum MOSFET input impedance loj heev, IGSS feem ntau nyob rau hauv nanoamp theem.

3. Cov yam ntxwv tsis zoo

gfs: ua. Nws hais txog qhov sib piv ntawm qhov kev hloov pauv hauv cov zis tawm tam sim no mus rau qhov hloov pauv hauv qhov rooj-qhov voltage. Nws yog ib qho kev ntsuas ntawm lub peev xwm ntawm qhov rooj qhov hluav taws xob los tswj cov dej ntws tam sim no. Thov saib daim ntawv qhia kev hloov pauv kev sib raug zoo ntawm gfs thiab VGS.

Qg: Tag nrho lub rooj vag them lub peev xwm. MOSFET yog ib hom kev tsav tsheb hluav taws xob. Cov txheej txheem tsav tsheb yog txheej txheem tsim cov rooj vag voltage. Qhov no yog ua tiav los ntawm kev them nyiaj lub peev xwm ntawm lub qhov rooj thiab lub qhov rooj ntws. Qhov nam no yuav tham txog hauv qab no.

Qgs: Lub rooj vag qhov chaw them nyiaj

Qgd: rooj vag-rau-drain nqi (siv rau hauv tus account Miller nyhuv). MOSFET yog ib hom kev tsav tsheb hluav taws xob. Cov txheej txheem tsav tsheb yog txheej txheem tsim cov rooj vag voltage. Qhov no yog ua tiav los ntawm kev them nyiaj lub peev xwm ntawm lub qhov rooj thiab lub qhov rooj ntws.

Td(on): conduction ncua sij hawm. Lub sij hawm txij thaum lub input voltage nce mus rau 10% mus txog rau thaum VDS poob mus rau 90% ntawm nws amplitude

Tr: lub sij hawm sawv, lub sij hawm rau cov zis voltage VDS poob los ntawm 90% mus rau 10% ntawm nws amplitude

Td (tawm): Tig-tawm ncua sij hawm, lub sij hawm txij thaum lub input voltage poob mus rau 90% mus rau thaum VDS nce mus rau 10% ntawm nws turn-off voltage

Tf: Lub caij nplooj zeeg, lub sijhawm rau qhov tso zis voltage VDS nce ntawm 10% mus rau 90% ntawm nws qhov amplitude

Ciss: Input capacitance, luv-circuit qhov ntws thiab qhov chaw, thiab ntsuas qhov capacitance ntawm lub rooj vag thiab qhov chaw nrog AC teeb liab. Ciss = CGD + CGS (CDS luv Circuit Court). Nws muaj kev cuam tshuam ncaj qha rau lub sijhawm tig thiab tig-tawm ntawm lub cuab yeej.

Coss: Output capacitance, luv-circuit lub rooj vag thiab qhov chaw, thiab ntsuas lub capacitance ntawm qhov ntws thiab qhov chaw nrog AC teeb liab. Coss = CDS + CGD

Crss: Rov qab kis tau tus mob capacitance. Nrog rau qhov chaw txuas nrog hauv av, ntsuas qhov ntsuas nruab nrab ntawm qhov ntws thiab qhov rooj Crss = CGD. Ib qho tseem ceeb ntawm cov keyboards yog lub sijhawm nce thiab lub caij nplooj zeeg. Crss = CGD

Lub interelectrode capacitance thiab MOSFET induced capacitance ntawm MOSFET muab faib ua input capacitance, output capacitance thiab tawm tswv yim capacitance los ntawm feem ntau manufacturers. Cov txiaj ntsig tau hais yog rau qhov ntsuas hluav taws xob ruaj khov-rau-qhov hluav taws xob. Cov capacitances hloov pauv raws li qhov ntws-qhov hluav taws xob hloov pauv, thiab tus nqi ntawm cov capacitance muaj qhov txwv. Tus nqi input capacitance tsuas yog muab qhov kwv yees ntawm qhov kev them nqi uas yuav tsum tau muaj los ntawm tus tsav tsheb Circuit Court, thaum lub rooj vag them cov ntaub ntawv tseem ceeb dua. Nws qhia tias lub zog ntawm lub rooj vag yuav tsum tau them kom ncav cuag lub qhov rooj-rau-qhov voltage.

4. Avalanche breakdown yam ntxwv tsis

Lub avalanche breakdown characteristic parameter yog ib qho kev qhia ntawm MOSFET lub peev xwm los tiv thaiv overvoltage hauv lub xeev tawm. Yog tias qhov hluav taws xob ntau tshaj qhov dej-qhov txwv qhov hluav taws xob, lub cuab yeej yuav nyob rau hauv lub xeev avalanche.

EAS: Ib leeg mem tes avalanche tawg zog. Qhov no yog qhov txwv tsis pub, qhia qhov siab tshaj plaws avalanche tawg zog uas MOSFET tuaj yeem tiv taus.

IAR: avalanche tam sim no

EAR: Rov ua dua Avalanche Breakdown Zog

5. Nyob rau hauv vivo diode tsis

IS: Nruam siab tshaj plaws freewheeling tam sim no (los ntawm qhov chaw)

ISM: mem tes siab tshaj plaws freewheeling tam sim no (los ntawm qhov chaw)

VSD: pem hauv ntej voltage poob

Trr: rov qab lub sijhawm rov qab

Qrr: Rov qab them rov qab

Ton: Forward conduction lub sij hawm. (Basally negligible)

WINSOK MOSFET avalanche rhuav tshem cov yam ntxwv tsis zoo

MOSFET tig-on lub sij hawm thiab tig-off lub sij hawm txhais

Thaum ua ntawv thov, cov yam ntxwv hauv qab no feem ntau yuav tsum tau xav txog:

1. Qhov zoo kub coefficient ntawm V (BR) DSS. Cov yam ntxwv no, uas txawv ntawm cov khoom siv bipolar, ua rau lawv txhim khu kev qha ntau dua li kev ua haujlwm kub nce. Tab sis koj kuj yuav tsum tau xyuam xim rau nws txoj kev ntseeg siab thaum lub caij txias txias pib.

2. Tsis zoo kub coefficient yam ntxwv ntawm V(GS)th. Lub rooj vag qhov rooj muaj peev xwm yuav txo qis mus rau qee qhov raws li qhov sib txuas kub nce. Qee qhov hluav taws xob kuj tseem yuav txo qhov muaj peev xwm ntawm qhov pib, tej zaum txawm tias qis dua 0 lub peev xwm. Qhov tshwj xeeb no xav kom cov kws ua haujlwm saib xyuas kev cuam tshuam thiab tsis tseeb ntawm MOSFETs hauv cov xwm txheej no, tshwj xeeb tshaj yog rau cov ntawv thov MOSFET uas muaj qhov muaj peev xwm tsawg. Vim yog cov yam ntxwv no, qee zaum nws yog qhov tsim nyog los tsim lub peev xwm tawm ntawm lub rooj vag tsav tsheb mus rau qhov tsis zoo (xa mus rau N-hom, P-hom thiab lwm yam) kom tsis txhob cuam tshuam thiab tsis muaj kev cuam tshuam.

3.Positive kub coefficient yam ntxwv ntawm VDSon/RDSo. Tus yam ntxwv uas VDSon / RDSon nce me ntsis raws li qhov sib txuas qhov kub thiab txias ua rau nws tuaj yeem siv MOSFETs ncaj qha rau tib lub sijhawm. Cov khoom siv bipolar tsuas yog qhov sib txawv ntawm qhov no, yog li lawv siv nyob rau hauv tib lub sijhawm yuav nyuaj heev. RDSon kuj tseem yuav nce me ntsis thaum ID nce. Cov yam ntxwv no thiab cov yam ntxwv ntawm qhov kub thiab txias ntawm qhov sib txuas thiab qhov chaw RDSon ua rau MOSFET kom tsis txhob muaj kev puas tsuaj thib ob xws li cov khoom siv bipolar. Txawm li cas los xij, nws yuav tsum tau muab sau tseg tias cov nyhuv ntawm cov yam ntxwv no yog qhov tsawg heev. Thaum siv nyob rau hauv parallel, thawb-rub lossis lwm yam kev siv, koj tsis tuaj yeem tso siab rau tus kheej txoj cai ntawm qhov no. Qee qhov kev ntsuas tseem ceeb tseem xav tau. Cov yam ntxwv no kuj piav qhia tias kev poob qis ua rau loj dua ntawm qhov kub thiab txias. Yog li ntawd, kev saib xyuas tshwj xeeb yuav tsum tau them rau qhov kev xaiv ntawm cov kev txwv thaum xam qhov poob.

4. Cov yam ntxwv tsis zoo ntawm qhov kub thiab txias ntawm ID, kev nkag siab ntawm MOSFET tsis thiab nws cov yam ntxwv tseem ceeb ID yuav txo qis vim qhov kub ntawm qhov sib txuas nce. Cov yam ntxwv no ua rau nws feem ntau yuav tsum tau xav txog nws tus ID tsis nyob ntawm qhov kub thiab txias thaum tsim.

5. Tsis zoo kub coefficient yam ntxwv ntawm avalanche muaj peev xwm IER/EAS. Tom qab qhov sib txuas kub nce, txawm hais tias MOSFET yuav muaj qhov loj dua V (BR) DSS, nws yuav tsum tau muab sau tseg tias EAS yuav txo qis. Qhov ntawd yog hais tias, nws lub peev xwm los tiv thaiv avalanches nyob rau hauv qhov kub thiab txias yog qhov tsis muaj zog dua li qhov kub ib txwm muaj.

6. Lub peev xwm conduction thiab rov qab ua haujlwm ntawm cov kab mob parasitic diode hauv MOSFET tsis zoo dua li cov diodes zoo tib yam. Nws tsis yog yuav tsum tau siv los ua tus cab kuj tseem ceeb hauv lub voj voog hauv kev tsim. Thaiv diodes feem ntau txuas nrog hauv koob kom tsis siv cov kab mob parasitic diodes hauv lub cev, thiab cov khoom sib txuas ntxiv yog siv los tsim cov khoom siv hluav taws xob hauv hluav taws xob. Txawm li cas los xij, nws tuaj yeem suav tau tias yog tus neeg nqa khoom nyob rau hauv rooj plaub ntawm kev coj ua luv luv lossis qee qhov kev xav tau me me tam sim no xws li synchronous rectification.

7. Kev nce nrawm ntawm cov dej ntws tuaj yeem ua rau spurious-triggering ntawm lub rooj vag tsav, yog li qhov no yuav tsum tau xav txog hauv cov ntawv thov loj dVDS / dt (high-frequency fast switching circuits).