WST4041 P-Channel -40V -6A SOT-23-3L WINSOK MOSFET

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Qauv nab npawb:WS4041

BVDSS:-40 V

RDSON:30 mΩ

ID:-6 A

Channel:P-Channel

Pob:TSO-23-3L

Khoom Summery:WST4041 MOSFET muaj qhov hluav taws xob ntawm -40V, tam sim no ntawm -6A, tsis kam ntawm 30mΩ, P-Channel, thiab SOT-23-3L ntim.

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WST4041 yog lub zog P-channel MOSFET tsim los siv rau hauv synchronous puck converters. Nws muaj qhov ceev ntawm tes uas tso cai rau RDSON zoo heev thiab qhov rooj them nqi. WST4041 ua tau raws li qhov yuav tsum tau ua rau RoHS thiab Cov Khoom Muag Khoom Ntsuab, thiab nws los nrog 100% EAS lav rau kev ua tau zoo.

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Advanced Trench Technology nta cov xov tooj ntawm tes ceev thiab lub rooj vag qis super, txo cov nyhuv CdV / dt. Peb cov khoom tuaj nrog 100% EAS lav thiab kev xaiv tus phooj ywg ib puag ncig.

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High-frequency point-of-load synchronous puck converter, networking DC-DC fais fab system, load hloov, e-luam yeeb, controllers, digital devices, me me khoom siv hauv tsev, thiab cov khoom siv hluav taws xob.

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Cim	Parameter	Kev ntsuas	Chav tsev
VDS	Dej-qhov chaw Voltage	-40	V
VGS	Rooj vag-Qhov Chaw Voltage	± 20	V
ID@TC = 25 ℃	Nruam Drain Tam Sim No, VGS @ -10V1	-6.0	A
ID@TC = 100 ℃	Nruam Drain Tam Sim No, VGS @ -10V1	-4.5	A
IDM	Pulsed Drain Current2	-24	A
EAS	Tib Pulse Avalanche Zog 3	12	mJ
IAS	Avalanche tam sim no	-7	A
PD@TC = 25 ℃	Total Power Dissipation 4	1.4	W
TSTG	Cia qhov kub thiab txias	-55 rau 150	℃
TJ	Kev khiav hauj lwm Junction Temperature Range	-55 rau 150	℃

Cim	Parameter	Cov xwm txheej	Min.	Ntaus.	Max.	Chav tsev
BVDSS	Dej-qhov chaw tawg Voltage	VGS=0V, ID=-250uA	-40	---	---	V
△ BVDSS/△ TJ	BVDSS Kub Coefficient	Siv rau 25 ℃, ID = -1mA	---	-0.03 Nws	---	V / ℃
RDS (ON)	Static Drain-Source On-Resistance2	VGS=-10V, ID=-3A	---	30	40	mΩ
RDS (ON)	Static Drain-Source On-Resistance2	VGS=-4.5V, ID=-1A	---	40	58	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS, ID =-250uA	-0.8	-1.2	-2.2	V
△ VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS, ID =-250uA	---	4.56 ib	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=-28V, VGS=0V, TJ=25 ℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=-28V, VGS=0V, TJ=55 ℃	---	---	5	uA
IGSS	Rooj vag-Source Leakage Current	VGS = ± 20V, VDS = 0V	---	---	± 100	nA
gfs ua	Forward Transconductance	VDS=-5V, ID=-3A	---	15	---	S
Rg	Qhov rooj tiv thaiv	VDS=0V, VGS=0V, f=1MHz	---	3.8	---	Ω
Qg	Tag nrho cov rooj vag Charge (-4.5V)	VDS=-18V, VGS=-10V, ID=-4A	---	9.5 ib	---	nC
Qgs	Gate-Source Charge		---	1.7	---
Qgd	Rooj vag-Drain Charge		---	2.0	---
Td (rau)	Tig-On ncua sij hawm	VDD = -15V, VGS = -10V, RG = 6Ω, ID = -1A, RL = 15Ω	---	8	---	ns
Tr	Sawv Sijhawm		---	10	---
Td (tawm)	Tig-Off Ncua Sijhawm		---	18	---
Tf	Caij nplooj zeeg		---	8	---
Cis	Input Capacitance	VDS=-15V, VGS=0V, f=1MHz	---	420	---	pF
Coss	Tso zis Capacitance		---	77	---
Crss	Rov qab Hloov Capacitance		---	55	---