WST2088A N-channel 20V 7.5A SOT-23-3L WINSOK MOSFET

piav qhia luv luv:

Qauv nab npawb:NWS 2088A

BVDSS:20 V ua

RDSON:10.7m Ω

ID:7.5a ua

Channel:N-channel

Pob:TSO-23-3L

Khoom Summery:Qhov voltage ntawm WST2088A MOSFET yog 20V, tam sim no yog 7.5A, qhov tsis kam yog 10.7mΩ, channel yog N-channel, thiab pob yog SOT-23-3L.

Daim ntawv thov:Cov luam yeeb hluav taws xob, cov tswj hwm, cov khoom siv digital, cov khoom siv hauv tsev me, cov khoom siv hluav taws xob, thiab lwm yam.

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Product Detail

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Khoom cim npe

Kev piav qhia dav dav

WST2088A yog qhov ua tau zoo tshaj plaws trench N-ch MOSFETs nrog cov xov tooj ntawm tes siab heev, uas muab RDSON zoo heev thiab lub rooj vag them nqi rau feem ntau ntawm cov hluav taws xob me me hloov pauv thiab hloov pauv cov ntawv thov. WST2088A ua tau raws li RoHS thiab Green Product xav tau nrog kev ua haujlwm tag nrho kev ntseeg tau pom zoo.

Nta

Advanced high cell density Trench technology, Super Low Gate Charge, Zoo heev Cdv / dt nyhuv poob, Green Device Muaj

Daim ntawv thov

Daim ntawv thov kev hloov hluav taws xob, Kev hloov pauv nyuaj thiab ntau zaus Circuit Court, Kev siv hluav taws xob tsis cuam tshuam, hluav taws xob luam yeeb, cov tswj hwm, cov khoom lag luam digital, cov khoom siv me me, cov khoom siv hluav taws xob, thiab lwm yam.

cov khoom siv tooj

AO AO3416, ON NTR3C21NZ, VISHAY Si2312CDS, Nxperian PMV16XN, thiab lwm yam.

Cov tsis tseem ceeb

Cov yam ntxwv hluav taws xob (TJ = 25 ℃, tshwj tsis yog sau tseg)

Cim	Parameter	Kev ntsuas	Chav tsev
VDS	Dej-qhov chaw Voltage	20	V
VGS	Rooj vag-Qhov Chaw Voltage	± 12	V
ID@Tc=25 ℃	Nruam Nruam Tam Sim No, VGS @ 4.5V	7.5	A
ID@Tc = 70 ℃	Nruam Nruam Tam Sim No, VGS @ 4.5V	4.5	A
IDP	Pulsed Drain Current	24	A
PD@TA = 25 ℃	Total Power Dissipation	1.25	W
TSTG	Cia qhov kub thiab txias	-55 rau 150	℃
TJ	Kev khiav hauj lwm Junction Temperature Range	-55 rau 150	℃

Cim	Parameter	Cov xwm txheej	Min.	Ntaus.	Max.	Chav tsev
BVDSS	Dej-qhov chaw tawg Voltage	VGS=0V, ID=250uA	20	---	---	V
△ BVDSS/△ TJ	BVDSS Kub Coefficient	Siv rau 25 ℃, ID = 1mA	---	0.018 ib	---	V / ℃
RDS (ON)	Static Drain-Source On-Resistance2	VGS = 4.5V, ID = 6A	---	10.7 ib	14	mΩ
RDS (ON)	Static Drain-Source On-Resistance2					mΩ
		VGS = 2.5V, ID = 5A	---	12.8 ib	17
VGS(th)	Gate Threshold Voltage	VGS = VDS, ID = 250uA	0.4	0.63 ib	1.2	V
IDSS	Drain-Source Leakage Current	VDS=16V, VGS=0V.	---	---	10	uA
IGSS	Rooj vag-Source Leakage Current	VGS = ± 12V, VDS = 0V	---	---	± 100	nA
Qg	Total Gate Charge	VDS=15V, VGS=4.5V, ID=6A	---	10	---	nC
Qgs	Gate-Source Charge		---	1.6	---
Qgd	Rooj vag-Drain Charge		---	3.4	---
Td (rau)	Tig-On ncua sij hawm	VDS = 10V, VGS = 4.5V, RG = 3.3Ω ID = 1A	---	8	---	ns
Tr	Sawv Sijhawm		---	15	---
Td (tawm)	Tig-Off Ncua Sijhawm		---	33	---
Tf	Caij nplooj zeeg		---	13	---
Cis	Input Capacitance	VDS=15V, VGS=0V, f=1MHz	---	590 ua	---	pF
Coss	Tso zis Capacitance		---	125	---
Crss	Rov qab Hloov Capacitance		---	90	---