WST2088 N-channel 20V 8.8A SOT-23-3L WINSOK MOSFET

piav qhia luv luv:

Qauv nab npawb:NWS 2088

BVDSS:20 V ua

RDSON:8m0 ua

ID:8.8a ua

Channel:N-channel

Pob:TSO-23-3L

Khoom Summery:Qhov voltage ntawm WST2088 MOSFET yog 20V, tam sim no yog 8.8A, qhov tsis kam yog 8mΩ, channel yog N-channel, thiab pob yog SOT-23-3L.

Daim ntawv thov:Cov luam yeeb hluav taws xob, cov tswj hwm, cov khoom siv digital, cov khoom siv hauv tsev me, thiab cov khoom siv hluav taws xob.

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Product Detail

Daim ntawv thov

Khoom cim npe

Kev piav qhia dav dav

WST2088 MOSFETs yog N-channel transistors siab tshaj plaws ntawm kev ua lag luam. Lawv muaj cov xov tooj ntawm tes ceev heev, uas ua rau RDSON zoo heev thiab rooj vag nqi. Cov MOSFETs no zoo meej rau kev hloov hluav taws xob me me thiab cov ntawv thov hloov pauv. Lawv ua tau raws li RoHS thiab Green Product cov tseev kom muaj thiab tau raug kuaj tag nrho rau kev ntseeg tau.

Nta

Advanced Trench thev naus laus zis nrog cov xov tooj ntawm tes ceev, Super Tsawg Gate Charge, thiab zoo heev Cdv / dt nyhuv poob, ua rau Green Device.

Daim ntawv thov

Kev siv hluav taws xob, cov khoom siv hluav taws xob uas muaj kev hloov pauv nyuaj thiab ntau zaus, cov khoom siv hluav taws xob tsis cuam tshuam, e-luam yeeb, cov tswj hwm, cov khoom siv hluav taws xob, cov khoom siv hauv tsev me, thiab cov khoom siv hluav taws xob.

cov khoom siv tooj

AO AO3416, DINTEK DTS2300A DTS2318 DTS2314 DTS2316 DTS2322 DTS3214, thiab lwm yam.

Cov tsis tseem ceeb

Cim	Parameter	Kev ntsuas	Chav tsev
VDS	Dej-qhov chaw Voltage	20	V
VGS	Rooj vag-Qhov Chaw Voltage	± 12	V
ID@Tc=25 ℃	Nruam Nruam Tam Sim No, VGS @ 4.5V	8.8 ib	A
ID@Tc = 70 ℃	Nruam Nruam Tam Sim No, VGS @ 4.5V	6.2	A
IDP	Pulsed Drain Current	40	A
PD@TA = 25 ℃	Total Power Dissipation	1.5	W
TSTG	Cia qhov kub thiab txias	-55 rau 150	℃
TJ	Kev khiav hauj lwm Junction Temperature Range	-55 rau 150	℃

Cov yam ntxwv hluav taws xob (TJ = 25 ℃, tshwj tsis yog sau tseg)

Cim	Parameter	Cov xwm txheej	Min.	Ntaus.	Max.	Chav tsev
BVDSS	Dej-qhov chaw tawg Voltage	VGS=0V, ID=250uA	20	---	---	V
△ BVDSS/△ TJ	BVDSS Kub Coefficient	Siv rau 25 ℃, ID = 1mA	---	0.018 ib	---	V / ℃
RDS (ON)	Static Drain-Source On-Resistance2	VGS = 4.5V, ID = 6A	---	8	13	mΩ
RDS (ON)	Static Drain-Source On-Resistance2	VGS = 2.5V, ID = 5A	---	10	19	mΩ
VGS(th)	Gate Threshold Voltage	VGS = VDS, ID = 250uA	0.5	---	1.3	V
IDSS	Drain-Source Leakage Current	VDS=16V, VGS=0V.	---	---	10	uA
IGSS	Rooj vag-Source Leakage Current	VGS = ± 12V, VDS = 0V	---	---	± 100	nA
Qg	Total Gate Charge	VDS=15V, VGS=4.5V, ID=6A	---	16	---	nC
Qgs	Gate-Source Charge		---	3	---
Qgd	Rooj vag-Drain Charge		---	4.5	---
Td (rau)	Tig-On ncua sij hawm	VDS = 10V, VGS = 4.5V, RG = 3.3Ω ID = 1A	---	10	---	ns
Tr	Sawv Sijhawm		---	13	---
Td (tawm)	Tig-Off Ncua Sijhawm		---	28	---
Tf	Caij nplooj zeeg		---	7	---
Cis	Input Capacitance	VDS=15V, VGS=0V, f=1MHz	---	1400	---	pF
Coss	Tso zis Capacitance		---	170	---
Crss	Rov qab Hloov Capacitance		---	135	---