WST2011 Dual P-Channel -20V -3.2A SOT-23-6L WINSOK MOSFET
Kev piav qhia dav dav
WST2011 MOSFETs yog P-ch transistors siab tshaj plaws, uas muaj qhov sib txawv ntawm cov xov tooj ntawm tes tsis sib xws.Lawv muaj kev ua tau zoo tshwj xeeb, nrog rau RDSON qis thiab lub rooj vag them nqi, ua rau lawv zoo tagnrho rau kev hloov hluav taws xob me me thiab hloov pauv cov ntawv thov.Tsis tas li ntawd, WST2011 ua tau raws li RoHS thiab Green Product qauv thiab boasts tag nrho-function kev tso cai pom zoo.
Nta
Advanced Trench thev naus laus zis tso cai rau cov xov tooj ntawm tes ntau dua, ua rau Green Device nrog Super Low Gate Charge thiab zoo heev CdV / dt nyhuv poob.
Daim ntawv thov
High zaus point-of-load synchronous me fais fab hloov yog tsim rau siv nyob rau hauv MB / NB / UMPC / VGA, networking DC-DC fais fab mov, load keyboards, e-luam yeeb, controllers, digital cov khoom, cov khoom siv hauv tsev me, thiab cov khoom siv hluav taws xob. .
cov khoom siv tooj
ON FDC634P, VISHAY Si3443DDV, NXP PMDT670UPE,
Cov tsis tseem ceeb
| Cim | Parameter | Kev ntsuas | Chav tsev | |
| 10s ib | Lub Xeev | |||
| VDS | Dej-qhov chaw Voltage | -20 | V | |
| VGS | Rooj vag-Qhov Chaw Voltage | ± 12 | V | |
| ID@TA = 25 ℃ | Nruam Drain Tam Sim No, VGS @ -4.5V1 | -3.6 | -3.2 | A |
| ID@TA = 70 ℃ | Nruam Drain Tam Sim No, VGS @ -4.5V1 | -2.6 | -2.4 | A |
| IDM | Pulsed Drain Current2 | -12 | A | |
| PD@TA = 25 ℃ | Total Power Dissipation 3 | 1.7 | 1.4 | W |
| PD@TA = 70 ℃ | Total Power Dissipation 3 | 1.2 | 0.9 | W |
| TSTG | Cia qhov kub thiab txias | -55 rau 150 | ℃ | |
| TJ | Kev khiav hauj lwm Junction Temperature Range | -55 rau 150 | ℃ | |
| Cim | Parameter | Cov xwm txheej | Min. | Ntaus. | Max. | Chav tsev |
| BVDSS | Dej-qhov chaw tawg Voltage | VGS=0V, ID=-250uA | -20 | --- | --- | V |
| △ BVDSS/△ TJ | BVDSS Kub Coefficient | Siv rau 25 ℃, ID = -1mA | --- | -0.011 | --- | V / ℃ |
| RDS (ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V, ID=-2A | --- | 80 | 85 | mΩ |
| VGS=-2.5V, ID=-1A | --- | 95 | 115 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID =-250uA | -0.5 | -1.0 | -1.5 | V |
| △ VGS(th) | VGS(th) Temperature Coefficient | --- | 3.95 ib | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=-16V, VGS=0V, TJ=25 ℃ | --- | --- | -1 | uA |
| VDS=-16V, VGS=0V, TJ=55 ℃ | --- | --- | -5 | |||
| IGSS | Rooj vag-Source Leakage Current | VGS = ± 12V, VDS = 0V | --- | --- | ± 100 | nA |
| gfs ua | Forward Transconductance | VDS=-5V, ID=-2A | --- | 8.5 | --- | S |
| Qg | Tag nrho lub rooj vag Charge (-4.5V) | VDS=-15V, VGS=-4.5V, ID=-2A | --- | 3.3 | 11.3 | nC |
| Qgs | Gate-Source Charge | --- | 1.1 | 1.7 | ||
| Qgd | Rooj vag-Drain Charge | --- | 1.1 | 2.9 | ||
| Td (rau) | Tig-On ncua sij hawm | VDD = -15V, VGS = -4.5V, RG = 3.3Ω, ID = -2A | --- | 7.2 | --- | ns |
| Tr | Sawv Sijhawm | --- | 9.3 | --- | ||
| Td (tawm) | Tig-Off Ncua Sijhawm | --- | 15.4 ib | --- | ||
| Tf | Caij nplooj zeeg | --- | 3.6 | --- | ||
| Cis | Input Capacitance | VDS=-15V, VGS=0V, f=1MHz | --- | 750 | --- | pF |
| Coss | Tso zis Capacitance | --- | 95 | --- | ||
| Crss | Rov qab Hloov Capacitance | --- | 68 | --- |
