WSR200N08 N-channel 80V 200A TO-220-3L WINSOK MOSFET

piav qhia luv luv:

Qauv nab npawb:WSR200N08

BVDSS:80v ua

RDSON:2,9m wb

ID:200 A

Channel:N-channel

Pob:Tom ntej: 220-3L

Khoom Summery:WSR200N08 MOSFET tuaj yeem ua haujlwm txog 80 volts thiab 200 amps nrog qhov tsis kam ntawm 2.9 milliohms.Nws yog ib qho khoom siv N-channel thiab tuaj hauv pob TO-220-3L.

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Kev piav qhia dav dav

WSR200N08 yog qhov ua tau zoo tshaj plaws trench N-Ch MOSFET nrog cov xov tooj ntawm tes siab heev, uas muab RDSON zoo heev thiab cov rooj vag them nqi rau feem ntau ntawm cov ntaub ntawv siv synchronous puck converter.WSR200N08 ua tau raws li RoHS thiab Cov Khoom Muag Khoom Ntsuab, 100% EAS lav nrog kev ua haujlwm tag nrho kev ntseeg tau pom zoo.

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Advanced high cell density Trench technology, Super Low Gate Charge, Zoo heev CdV / dt nyhuv poob, 100% EAS Guaranteed, Ntsuab Device muaj.

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cov khoom siv tooj

AO AOT480L, ON FDP032N08B, ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, thiab lwm yam.

Cov tsis tseem ceeb

Cov yam ntxwv hluav taws xob (TJ = 25 ℃, tshwj tsis yog sau tseg)

Cim	Parameter	Kev ntsuas	Chav tsev
VDS	Dej-qhov chaw Voltage	80	V
VGS	Rooj vag-Qhov Chaw Voltage	± 25	V
ID@TC = 25 ℃	Nruam Drain Tam Sim No, VGS @ 10V1	200	A
ID@TC = 100 ℃	Nruam Drain Tam Sim No, VGS @ 10V1	144	A
IDM	Pulsed Drain Current2, TC = 25 ° C	790 ib	A
EAS	Avalanche Zog, Tib mem tes, L = 0.5mH	1496 ib	mJ
IAS	Avalanche tam sim no, Tib mem tes, L = 0.5mH	200	A
PD@TC = 25 ℃	Total Power Dissipation 4	345	W
PD@TC = 100 ℃	Total Power Dissipation 4	173	W
TSTG	Cia qhov kub thiab txias	-55-175 Ib	℃
TJ	Kev khiav hauj lwm Junction Temperature Range	175	℃

Cim	Parameter	Cov xwm txheej	Min.	Ntaus.	Max.	Chav tsev
BVDSS	Dej-qhov chaw tawg Voltage	VGS=0V, ID=250uA	80	---	---	V
△ BVDSS/△ TJ	BVDSS Kub Coefficient	Siv rau 25 ℃, ID = 1mA	---	0.096 ib	---	V / ℃
RDS (ON)	Static Drain-Source On-Resistance2	VGS = 10V, ID = 100A	---	2.9	3.5	mΩ
VGS(th)	Gate Threshold Voltage	VGS = VDS, ID = 250uA	2.0	3.0	4.0	V
△ VGS(th)	VGS(th) Temperature Coefficient	VGS = VDS, ID = 250uA	---	-5.5	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS = 80V, VGS = 0V, TJ = 25 ℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS = 80V, VGS = 0V, TJ = 55 ℃	---	---	10	uA
IGSS	Rooj vag-Source Leakage Current	VGS = ± 25V, VDS = 0V	---	---	± 100	nA
Rg	Qhov rooj tiv thaiv	VDS=0V, VGS=0V, f=1MHz	---	3.2	---	Ω
Qg	Tag nrho lub rooj vag Charge (10V)	VDS=80V, VGS=10V, ID=30A	---	197	---	nC
Qgs	Gate-Source Charge		---	31	---
Qgd	Rooj vag-Drain Charge		---	75	---
Td (rau)	Tig-On ncua sij hawm	VDD = 50V, VGS = 10V, RG = 3Ω, ID = 30A	---	28	---	ns
Tr	Sawv Sijhawm		---	18	---
Td (tawm)	Tig-Off Ncua Sijhawm		---	42	---
Tf	Caij nplooj zeeg		---	54	---
Cis	Input Capacitance	VDS=15V, VGS=0V, f=1MHz	---	ib 8154	---	pF
Coss	Tso zis Capacitance		---	1029 ib	---
Crss	Rov qab Hloov Capacitance		---	650	---