WSR140N12 N-channel 120V 140A TO-220-3L WINSOK MOSFET

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WSR140N12 N-channel 120V 140A TO-220-3L WINSOK MOSFET

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  • Qauv nab npawb:WSR140N12
  • BVDSS:120 V
  • RDSON:5 m Ω
  • ID:140 A
  • Channel:N-channel
  • Pob:Tom ntej: 220-3L
  • Khoom Summery:Qhov voltage ntawm WSR140N12 MOSFET yog 120V, tam sim no yog 140A, qhov tsis kam yog 5mΩ, channel N-channel, thiab pob yog TO-220-3L.
  • Daim ntawv thov:Fais fab mov, kho mob, khoom siv loj, BMS thiab lwm yam.
  • Product Detail

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    WSR140N12 yog qhov ua tau zoo tshaj plaws trench N-ch MOSFET nrog cov xov tooj ntawm tes siab heev, uas muab RDSON zoo heev thiab cov rooj vag them nqi rau feem ntau ntawm cov ntaub ntawv siv synchronous puck converter. WSR140N12 ua tau raws li RoHS thiab Cov Khoom Muag Khoom Ntsuab, 100% EAS tau lees paub nrog tag nrho cov kev ntseeg tau pom zoo.

    Nta

    Advanced high cell density Trench technology, Super Low Gate Charge, Zoo heev CdV/dt nyhuv poob, 100% EAS Guaranteed, Ntsuab Device muaj.

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    High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Fais fab mov, kev kho mob, khoom siv loj, BMS thiab lwm yam.

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    ST STP40NF12 thiab lwm yam.

    Cov tsis tseem ceeb

    Cim Parameter Kev ntsuas Chav tsev
    VDS Dej-qhov chaw Voltage 120 V
    VGS Rooj vag-Qhov Chaw Voltage ± 20 V
    ID Nruam Drain Tam Sim No, VGS @ 10V (TC = 25 ℃) 140 A
    IDM Pulsed Drain Current 330 A
    EAS Tib Pulse Avalanche Zog 400 mJ
    PD Tag Nrho Cov Hluav Taws Xob Dissipation... C = 25 ℃) 192 W
    RJA Thermal tsis kam, junction-ambient 62 ℃ / W
    RθJC Thermal tiv thaiv, junction-case 0.65 ib ℃ / W
    TSTG Cia qhov kub thiab txias -55 rau 150
    TJ Kev khiav hauj lwm Junction Temperature Range -55 rau 150
    Cim Parameter Cov xwm txheej Min. Ntaus. Max. Chav tsev
    BVDSS Dej-qhov chaw tawg Voltage VGS=0V, ID=250uA 120 --- --- V
    RDS (ON) Static Drain-Source On-Resistance2 VGS = 10V, ID = 30A --- 5.0 6.5
    VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250uA 2.0 --- 4.0 V
    IDSS Drain-Source Leakage Current VDS = 120V, VGS = 0V, TJ = 25 ℃ --- --- 1 uA
    IGSS Rooj vag-Source Leakage Current VGS = ± 20V, VDS = 0V --- --- ± 100 nA
    Qg Total Gate Charge VDS=50V, VGS=10V, ID=15A --- 68.9 ua --- nC
    Qgs Gate-Source Charge --- 18.1 ---
    Qgd Rooj vag-Drain Charge --- 15.9 ib ---
    Td (rau) Tig-On ncua sij hawm VDD = 50V, VGS = 10VRG = 2Ω, ID = 25A --- 30.3 --- ns
    Tr Sawv Sijhawm --- 33.0 Nws ---
    Td (tawm) Tig-Off Ncua Sijhawm --- 59.5 ib ---
    Tf Caij nplooj zeeg --- 11.7 ib ---
    Cis Input Capacitance VDS = 50V, VGS = 0V, f = 1MHz --- ib 5823 --- pF
    Coss Tso zis Capacitance --- ib 778.3 ---
    Crss Rov qab Hloov Capacitance --- 17.5 Nws ---

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