WSP4888 Dual N-Channel 30V 9.8A SOP-8 WINSOK MOSFET

piav qhia luv luv:

Qauv nab npawb:wb 4888

BVDSS:30 V

RDSON:13.5m Ω

ID:9.8a ua

Channel:Dual N-Channel

Pob:SIB-8

Khoom Summery:Qhov voltage ntawm WSP4888 MOSFET yog 30V, tam sim no yog 9.8A, qhov tsis kam yog 13.5mΩ, channel yog Dual N-Channel, thiab pob yog SOP-8.

Daim ntawv thov:E-luam yeeb, wireless chargers, cav, drones, kev kho mob, tsheb chargers, tswj, cov khoom siv digital, cov khoom siv me me, thiab cov khoom siv hluav taws xob rau cov neeg siv khoom.

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Kev piav qhia dav dav

WSP4888 yog qhov ua tau zoo transistor nrog cov qauv ntawm tes ntom ntom, zoo tagnrho rau kev siv hauv synchronous puck converters. Nws khav theeb zoo heev RDSON thiab cov nqi rooj vag, ua rau nws xaiv zoo tshaj plaws rau cov ntawv thov no. Tsis tas li ntawd, WSP4888 ua tau raws li RoHS thiab Green Product yuav tsum tau thiab los nrog 100% EAS lav rau kev ua haujlwm txhim khu kev qha.

Nta

Advanced Trench Technology nta cov xov tooj ntawm tes ceev thiab lub rooj vag qis super, txo cov nyhuv CdV / dt. Peb cov khoom tuaj nrog 100% EAS lav thiab kev xaiv tus phooj ywg ib puag ncig.

Peb cov MOSFETs tau txais kev tswj xyuas nruj kom ntseeg tau tias lawv ua tau raws li cov qauv kev lag luam siab tshaj plaws. Txhua chav tsev raug kuaj xyuas kom zoo rau kev ua tau zoo, ua haujlwm ntev thiab kev ntseeg tau, ua kom lub neej ntev ntawm cov khoom. Nws cov qauv tsim rugged ua rau nws tuaj yeem tiv taus kev ua haujlwm hnyav, ua kom cov khoom siv tsis cuam tshuam kev ua haujlwm.

Cov nqi sib tw: Txawm tias lawv qhov zoo tshaj plaws, peb cov MOSFETs yog tus nqi sib tw, muab cov nqi txuag nyiaj ntau yam tsis muaj kev cuam tshuam kev ua haujlwm. Peb ntseeg tias txhua tus neeg siv khoom yuav tsum tau nkag mus rau cov khoom lag luam zoo, thiab peb lub tswv yim tus nqi qhia txog qhov kev cog lus no.

Kev sib raug zoo dav: Peb MOSFETs tau sib xws nrog ntau lub tshuab hluav taws xob, ua rau lawv muaj ntau yam kev xaiv rau cov tuam ntxhab thiab cov neeg siv khoom kawg. Nws koom ua ke seamlessly rau hauv cov tshuab uas twb muaj lawm, txhim kho kev ua tau zoo tag nrho yam tsis tas yuav tsum muaj kev hloov kho loj.

Daim ntawv thov

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Cov tsis tseem ceeb

Cim	Parameter	Kev ntsuas	Chav tsev
VDS	Dej-qhov chaw Voltage	30	V
VGS	Rooj vag-Qhov Chaw Voltage	± 20	V
ID@TC = 25 ℃	Nruam Drain Tam Sim No, VGS @ 10V1	9.8 ib	A
ID@TC = 70 ℃	Nruam Drain Tam Sim No, VGS @ 10V1	8.0 ib	A
IDM	Pulsed Drain Current2	45	A
EAS	Tib Pulse Avalanche Zog 3	25	mJ
IAS	Avalanche tam sim no	12	A
PD@TA = 25 ℃	Total Power Dissipation 4	2.0	W
TSTG	Cia qhov kub thiab txias	-55 rau 150	℃
TJ	Kev khiav hauj lwm Junction Temperature Range	-55 rau 150	℃

Cim	Parameter	Cov xwm txheej	Min.	Ntaus.	Max.	Chav tsev
BVDSS	Dej-qhov chaw tawg Voltage	VGS=0V, ID=250uA	30	---	---	V
△ BVDSS/△ TJ	BVDSS Kub Coefficient	Siv rau 25 ℃, ID = 1mA	---	0.034 ib	---	V / ℃
RDS (ON)	Static Drain-Source On-Resistance2	VGS = 10V, ID = 8.5A	---	13.5 Nws	18	mΩ
RDS (ON)	Static Drain-Source On-Resistance2					mΩ
		VGS = 4.5V, ID = 5A	---	18	25
VGS(th)	Gate Threshold Voltage	VGS = VDS, ID = 250uA	1.5	1.8	2.5	V
		VGS = VDS, ID = 250uA
△ VGS(th)	VGS(th) Temperature Coefficient		---	-5.8	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS = 24V, VGS = 0V, TJ = 25 ℃	---	---	1	uA
IDSS	Drain-Source Leakage Current					uA
		VDS = 24V, VGS = 0V, TJ = 55 ℃	---	---	5
IGSS	Rooj vag-Source Leakage Current	VGS = ± 20V, VDS = 0V	---	---	± 100	nA
gfs ua	Forward Transconductance	VDS=5V, ID=8A	---	9	---	S
Rg	Qhov rooj tiv thaiv	VDS=0V, VGS=0V, f=1MHz	---	1.8	2.9	Ω
Qg	Tag nrho lub rooj vag Charge (4.5V)	VDS=15V, VGS=4.5V, ID=8.8A	---	6	8.4	nC
Qgs	Gate-Source Charge		---	1.5	---
Qgd	Rooj vag-Drain Charge		---	2.5	---
Td (rau)	Tig-On ncua sij hawm	VDD = 15V, VGEN = 10V, RG = 6Ω ID = 1A, RL = 15Ω	---	7.5	9.8 ib	ns
Tr	Sawv Sijhawm		---	9.2 ib	19
Td (tawm)	Tig-Off Ncua Sijhawm		---	19	34
Tf	Caij nplooj zeeg		---	4.2	8
Cis	Input Capacitance	VDS=15V, VGS=0V, f=1MHz	---	590 ua	701 ib	pF
Coss	Tso zis Capacitance		---	98	112
Crss	Rov qab Hloov Capacitance		---	59	91