WSP4447 P-Channel -40V -11A SOP-8 WINSOK MOSFET

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Qauv nab npawb:wb 4447

BVDSS:-40 V

RDSON:13m Ω

ID:-11 A

Channel:P-Channel

Pob:SIB-8

Khoom Summery:Qhov voltage ntawm WSP4447 MOSFET yog -40V, tam sim no yog -11A, qhov tsis kam yog 13mΩ, channel yog P-Channel, thiab pob yog SOP-8.

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WSP4447 yog MOSFET ua tau zoo tshaj plaws uas siv cov cuab yeej siv trench thiab muaj lub cell ceev. Nws muaj RDSON zoo heev thiab rooj vag nqi, ua rau nws haum rau siv nyob rau hauv feem ntau synchronous phaw converter daim ntaub ntawv. WSP4447 ua tau raws li RoHS thiab Cov Khoom Muag Khoom Ntsuab, thiab tuaj nrog 100% EAS lav rau tag nrho kev ntseeg.

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Advanced Trench thev naus laus zis tso cai rau cov xov tooj ntawm tes ntau dua, ua rau Green Device nrog Super Low Gate Charge thiab zoo heev CdV / dt nyhuv poob.

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High Frequency Converter rau ntau yam Electronics
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Cov tsis tseem ceeb

Cim	Parameter	Kev ntsuas	Chav tsev
VDS	Dej-qhov chaw Voltage	-40	V
VGS	Rooj vag-Qhov Chaw Voltage	± 20	V
ID@TA = 25 ℃	Nruam Drain Tam Sim No, VGS @ -10V1	-11	A
ID@TA = 70 ℃	Nruam Drain Tam Sim No, VGS @ -10V1	-9.0	A
IDM ib	300µs Pulsed Drain Tam sim no (VGS = -10V)	-44	A
EAS b	Avalanche Zog, Tib mem tes (L = 0.1mH)	54	mJ
IAS b	Avalanche tam sim no, Tib mem tes (L = 0.1mH)	-33	A
PD@TA = 25 ℃	Total Power Dissipation 4	2.0	W
TSTG	Cia qhov kub thiab txias	-55 rau 150	℃
TJ	Kev khiav hauj lwm Junction Temperature Range	-55 rau 150	℃

Cim	Parameter	Cov xwm txheej	Min.	Ntaus.	Max.	Chav tsev
BVDSS	Dej-qhov chaw tawg Voltage	VGS=0V, ID=-250uA	-40	---	---	V
△ BVDSS/△ TJ	BVDSS Kub Coefficient	Siv rau 25 ℃, ID = -1mA	---	-0.018 Nws	---	V / ℃
RDS (ON)	Static Drain-Source On-Resistance2	VGS=-10V, ID=-13A	---	13	16	mΩ
RDS (ON)	Static Drain-Source On-Resistance2					mΩ
		VGS=-4.5V, ID=-5A	---	18	26
VGS(th)	Gate Threshold Voltage	VGS=VDS, ID =-250uA	-1.4	-1.9	-2.4	V
		VGS=VDS, ID =-250uA
△ VGS(th)	VGS(th) Temperature Coefficient		---	5.04 ib	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=-32V, VGS=0V, TJ=25 ℃	---	---	-1	uA
IDSS	Drain-Source Leakage Current					uA
		VDS=-32V, VGS=0V, TJ=55 ℃	---	---	-5
IGSS	Rooj vag-Source Leakage Current	VGS = ± 20V, VDS = 0V	---	---	± 100	nA
gfs ua	Forward Transconductance	VDS=-5V, ID=-10A	---	18	---	S
Qg	Tag nrho cov rooj vag Charge (-4.5V)	VDS=-20V, VGS=-10V, ID=-11A	---	32	---	nC
Qgs	Gate-Source Charge		---	5.2	---
Qgd	Rooj vag-Drain Charge		---	8	---
Td (rau)	Tig-On ncua sij hawm	VDD = -20V, VGS = -10V, RG = 6Ω, ID = -1A, RL = 20Ω	---	14	---	ns
Tr	Sawv Sijhawm		---	12	---
Td (tawm)	Tig-Off Ncua Sijhawm		---	41	---
Tf	Caij nplooj zeeg		---	22	---
Cis	Input Capacitance	VDS=-15V, VGS=0V, f=1MHz	---	1500	---	pF
Coss	Tso zis Capacitance		---	235	---
Crss	Rov qab Hloov Capacitance		---	180	---