WSP4016 N-channel 40V 15.5A SOP-8 WINSOK MOSFET

piav qhia luv luv:

Qauv nab npawb:wb 4016

BVDSS:40v ua

RDSON:11.5m Ω

ID:15.5 A

Channel:N-channel

Pob:SIB-8

Khoom Summery:Qhov voltage ntawm WSP4016 MOSFET yog 40V, tam sim no yog 15.5A, qhov tsis kam yog 11.5mΩ, channel yog N-channel, thiab pob yog SOP-8.

Daim ntawv thov:Automotive electronics, LED teeb, suab, cov khoom siv digital, cov khoom siv hauv tsev me, cov khoom siv hluav taws xob, kev tiv thaiv boards, thiab lwm yam

Xa email rau peb PDF

Product Detail

Daim ntawv thov

Khoom cim npe

Kev piav qhia dav dav

Lub WSP4016 yog qhov ua tau zoo tshaj plaws trench N-ch MOSFET nrog cov xov tooj ntawm tes ceev heev, uas muab RDSON zoo heev thiab cov rooj vag them nyiaj rau feem ntau ntawm cov ntaub ntawv hloov pauv hloov pauv synchronous.WSP4016 ua tau raws li RoHS thiab Cov Khoom Muag Khoom Ntsuab, 100% EAS lav nrog kev ua haujlwm tag nrho kev ntseeg tau pom zoo.

Nta

Advanced high cell density Trench technology, Super Low Gate Charge, Zoo heev CdV / dt nyhuv poob, 100% EAS Guaranteed, Ntsuab Device muaj.

Daim ntawv thov

Dawb LED boost converters, Automotive Systems, Kev lag luam DC / DC Hloov Circuits, EAutomotive electronics, LED teeb, suab, cov khoom lag luam, cov khoom siv me me, cov khoom siv hluav taws xob, kev tiv thaiv boards, thiab lwm yam.

cov khoom siv tooj

AO AOSP66406, ON FDS8842NZ, VISHAY Si4840BDY, PANJIT PJL9420, Sinopower SM4037NHK, NIKO PV608BA,
DINTEK DTM 5420.

Cov tsis tseem ceeb

Cim	Parameter	Kev ntsuas	Chav tsev
VDS	Dej-qhov chaw Voltage	40	V
VGS	Rooj vag-Qhov Chaw Voltage	± 20	V
ID@TC = 25 ℃	Nruam Drain Tam Sim No, VGS @ 10V1	15.5 ib	A
ID@TC = 70 ℃	Nruam Drain Tam Sim No, VGS @ 10V1	8.4 ib	A
IDM	Pulsed Drain Current2	30	A
PD@TA = 25 ℃	Tag Nrho Cov Hluav Taws Xob Dissipation TA = 25 ° C	2.08 Nws	W
PD@TA = 70 ℃	Tag Nrho Cov Hluav Taws Xob Dissipation TA = 70 ° C	1.3	W
TSTG	Cia qhov kub thiab txias	-55 rau 150	℃
TJ	Kev khiav hauj lwm Junction Temperature Range	-55 rau 150	℃

Cov yam ntxwv hluav taws xob (TJ = 25 ℃, tshwj tsis yog sau tseg)

Cim	Parameter	Cov xwm txheej	Min.	Ntaus.	Max.	Chav tsev
BVDSS	Dej-qhov chaw tawg Voltage	VGS=0V, ID=250uA	40	---	---	V
RDS (ON)	Static Drain-Source On-Resistance2	VGS=10V, ID=7A	---	8.5	11.5	mΩ
RDS (ON)	Static Drain-Source On-Resistance2	VGS = 4.5V, ID = 5A	---	11	14.5 ib	mΩ
VGS(th)	Gate Threshold Voltage	VGS = VDS, ID = 250uA	1.0	1.8	2.5	V
IDSS	Drain-Source Leakage Current	VDS = 32V, VGS = 0V, TJ = 25 ℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS = 32V, VGS = 0V, TJ = 55 ℃	---	---	25	uA
IGSS	Rooj vag-Source Leakage Current	VGS = ± 20V, VDS = 0V	---	---	± 100	nA
gfs ua	Forward Transconductance	VDS=5V, ID=15A	---	31	---	S
Qg	Tag nrho lub rooj vag Charge (4.5V)	VDS=20V, VGS=10V, ID=7A	---	20	30	nC
Qgs	Gate-Source Charge		---	3.9	---
Qgd	Rooj vag-Drain Charge		---	3	---
Td (rau)	Tig-On ncua sij hawm	VDD = 20V, VGEN = 10V, RG = 1Ω, ID = 1A, RL = 20Ω.	---	12.6	---	ns
Tr	Sawv Sijhawm		---	10	---
Td (tawm)	Tig-Off Ncua Sijhawm		---	23.6 ib	---
Tf	Caij nplooj zeeg		---	6	---
Cis	Input Capacitance	VDS = 20V, VGS = 0V, f = 1MHz	---	1125	---	pF
Coss	Tso zis Capacitance		---	132	---
Crss	Rov qab Hloov Capacitance		---	70	---