WSM340N10G N-channel 100V 340A TOLL-8L WINSOK MOSFET

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Qauv nab npawb:WSM340N10G

BVDSS:100 V

RDSON:1,6m 0 0

ID:340a ua

Channel:N-channel

Pob:TSI-8L

Khoom Summery:Qhov hluav taws xob ntawm WSM340N10G MOSFET yog 100V, tam sim no yog 340A, qhov tsis kam yog 1.6mΩ, channel yog N-channel, thiab pob yog TOLL-8L.

Daim ntawv thov:Cov khoom siv kho mob, drones, PD cov khoom siv hluav taws xob, cov khoom siv hluav taws xob LED, cov khoom siv hauv tsev, thiab lwm yam.

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Product Detail

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Kev piav qhia dav dav

WSM340N10G yog qhov ua tau zoo tshaj plaws trench N-Ch MOSFET nrog cov xov tooj ntawm tes siab heev, uas muab RDSON zoo heev thiab rooj vag them nqi rau feem ntau ntawm cov ntaub ntawv synchronous puck converter. Lub WSM340N10G ua tau raws li RoHS thiab Cov Khoom Muag Khoom Ntsuab, 100% EAS lav nrog kev ua haujlwm tag nrho kev ntseeg tau pom zoo.

Nta

Advanced high cell density Trench technology, Super Low Gate Charge, Zoo heev CdV / dt nyhuv poob, 100% EAS Guaranteed, Ntsuab Device muaj.

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Synchronous rectification, DC / DC Converter, Load hloov, Cov cuab yeej kho mob, drones, PD fais fab mov, LED fais fab mov, khoom siv, thiab lwm yam.

Cov tsis tseem ceeb

Qhov siab tshaj qhov ntsuas

Cim	Parameter	Kev ntsuas	Chav tsev
VDS	Dej-qhov chaw Voltage	100	V
VGS	Rooj vag-Qhov Chaw Voltage	± 20	V
ID@TC = 25 ℃	Nruam Drain Tam sim no, VGS @ 10V	340	A
ID@TC = 100 ℃	Nruam Drain Tam sim no, VGS @ 10V	230	A
IDM	Pulsed Drain Current..TC = 25°C	1150	A
EAS	Avalanche Zog, Tib mem tes, L = 0.5mH	1800	mJ
IAS	Avalanche tam sim no, Tib mem tes, L = 0.5mH	120	A
PD@TC = 25 ℃	Total Power Dissipation	375	W
PD@TC = 100 ℃	Total Power Dissipation	187	W
TSTG	Cia qhov kub thiab txias	-55-175 Ib	℃
TJ	Kev khiav hauj lwm Junction Temperature Range	175	℃

Cov yam ntxwv hluav taws xob (TJ = 25 ℃, tshwj tsis yog sau tseg)

Cim	Parameter	Cov xwm txheej	Min.	Ntaus.	Max.	Chav tsev
BVDSS	Dej-qhov chaw tawg Voltage	VGS=0V, ID=250uA	100	---	---	V
△ BVDSS/△ TJ	BVDSS Kub Coefficient	Siv rau 25 ℃, ID = 1mA	---	0.096 ib	---	V / ℃
RDS (ON)	Static Drain-Source On-Resistance	VGS = 10V, ID = 50A	---	1.6	2.3	mΩ
VGS(th)	Gate Threshold Voltage	VGS = VDS, ID = 250uA	2.0	3.0	4.0	V
△ VGS(th)	VGS(th) Temperature Coefficient	VGS = VDS, ID = 250uA	---	-5.5	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS = 85V, VGS = 0V, TJ = 25 ℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=85V, VGS=0V, TJ=55 ℃	---	---	10	uA
IGSS	Rooj vag-Source Leakage Current	VGS = ± 25V, VDS = 0V	---	---	± 100	nA
Rg	Qhov rooj tiv thaiv	VDS=0V, VGS=0V, f=1MHz	---	1.0	---	Ω
Qg	Tag nrho lub rooj vag Charge (10V)	VDS=50V, VGS=10V, ID=50A	---	260	---	nC
Qgs	Gate-Source Charge		---	80	---
Qgd	Rooj vag-Drain Charge		---	60	---
Td (rau)	Tig-On ncua sij hawm	VDD = 50V, VGS = 10V, RG = 1Ω, RL = 1Ω, IDS = 1A.	---	88	---	ns
Tr	Sawv Sijhawm		---	50	---
Td (tawm)	Tig-Off Ncua Sijhawm		---	228	---
Tf	Caij nplooj zeeg		---	322	---
Cis	Input Capacitance	VDS=40V, VGS=0V, f=1MHz	---	13900 Nws	---	pF
Coss	Tso zis Capacitance		---	ib 6160	---
Crss	Rov qab Hloov Capacitance		---	220	---