WSM320N04G N-channel 40V 320A TOLL-8L WINSOK MOSFET

piav qhia luv luv:

Qauv nab npawb:WSM320N04G

BVDSS:40v ua

RDSON:1.2m Ω

ID:320a ua

Channel:N-channel

Pob:TSI-8L

Khoom Summery:WSM320N04G MOSFET muaj qhov hluav taws xob ntawm 40V, tam sim no ntawm 320A, qhov tsis kam ntawm 1.2mΩ, N-channel, thiab pob TOLL-8L.

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Product Detail

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Khoom cim npe

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WSM320N04G yog MOSFET kev ua haujlwm siab uas siv lub trench tsim thiab muaj lub cell ceev heev. Nws muaj RDSON zoo heev thiab rooj vag nqi thiab yog haum rau feem ntau synchronous puck converter daim ntaub ntawv. WSM320N04G ua tau raws li RoHS thiab Cov Khoom Siv Ntsuab thiab tau lees tias muaj 100% EAS thiab kev ntseeg siab ua haujlwm.

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Advanced high cell density Trench technology, thaum tseem muaj lub rooj vag qis rau kev ua haujlwm zoo. Tsis tas li ntawd, nws khav theeb zoo heev CdV / dt nyhuv poob, 100% EAS Guarantee thiab ib qho kev xaiv hauv eco.

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High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Fais Fab System, Daim Ntawv Thov Kev Siv Hluav Taws Xob, Hluav Taws Xob Hluav Taws Xob, wireless charging, drones, kev kho mob, tsheb them, cov tswj hwm, cov khoom siv digital, cov khoom siv hauv tsev me, thiab cov khoom siv hluav taws xob.

Cov tsis tseem ceeb

Cim	Parameter	Kev ntsuas	Chav tsev
VDS	Dej-qhov chaw Voltage	40	V
VGS	Rooj vag-Qhov Chaw Voltage	± 20	V
ID@TC = 25 ℃	Nruam Drain Tam Sim No, VGS @ 10V1,7	320	A
ID@TC = 100 ℃	Nruam Drain Tam Sim No, VGS @ 10V1,7	192	A
IDM	Pulsed Drain Current2	900	A
EAS	Tib Pulse Avalanche Zog 3	980 ua	mJ
IAS	Avalanche tam sim no	70	A
PD@TC = 25 ℃	Total Power Dissipation 4	250	W
TSTG	Cia qhov kub thiab txias	-55-175 Ib	℃
TJ	Kev khiav hauj lwm Junction Temperature Range	-55-175 Ib	℃

Cim	Parameter	Cov xwm txheej	Min.	Ntaus.	Max.	Chav tsev
BVDSS	Dej-qhov chaw tawg Voltage	VGS=0V, ID=250uA	40	---	---	V
△ BVDSS/△ TJ	BVDSS Kub Coefficient	Siv rau 25 ℃, ID = 1mA	---	0.050 Nws	---	V / ℃
RDS (ON)	Static Drain-Source On-Resistance2	VGS = 10V, ID = 25A	---	1.2	1.5	mΩ
RDS (ON)	Static Drain-Source On-Resistance2	VGS = 4.5V, ID = 20A	---	1.7	2.5	mΩ
VGS(th)	Gate Threshold Voltage	VGS = VDS, ID = 250uA	1.2	1.7	2.6	V
△ VGS(th)	VGS(th) Temperature Coefficient	VGS = VDS, ID = 250uA	---	-6.94	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS = 40V, VGS = 0V, TJ = 25 ℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS = 40V, VGS = 0V, TJ = 55 ℃	---	---	10	uA
IGSS	Rooj vag-Source Leakage Current	VGS = ± 20V, VDS = 0V	---	---	± 100	nA
gfs ua	Forward Transconductance	VDS = 5V, ID = 50A	---	160	---	S
Rg	Qhov rooj tiv thaiv	VDS=0V, VGS=0V, f=1MHz	---	1.0	---	Ω
Qg	Tag nrho lub rooj vag Charge (10V)	VDS=20V, VGS=10V, ID=25A	---	130	---	nC
Qgs	Gate-Source Charge		---	43	---
Qgd	Rooj vag-Drain Charge		---	83	---
Td (rau)	Tig-On ncua sij hawm	VDD = 20V, VGEN = 4.5V, RG = 2.7Ω, ID = 1A.	---	30	---	ns
Tr	Sawv Sijhawm		---	115	---
Td (tawm)	Tig-Off Ncua Sijhawm		---	95	---
Tf	Caij nplooj zeeg		---	80	---
Cis	Input Capacitance	VDS = 20V, VGS = 0V, f = 1MHz	---	8 100	---	pF
Coss	Tso zis Capacitance		---	1200	---
Crss	Rov qab Hloov Capacitance		---	800	---