WSF6012 N&P-Channel 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET

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Qauv nab npawb:NWS 6012

BVDSS:60V / -60V

RDSON:28mΩ / 75mΩ

ID:20A/-15A

Channel:N&P Channel

Pob:Tom ntej: 252-4L

Khoom Summery:WSF6012 MOSFET muaj qhov hluav taws xob ntau ntawm 60V thiab -60V, tuaj yeem ua haujlwm tam sim no mus txog 20A thiab -15A, muaj qhov tsis kam ntawm 28mΩ thiab 75mΩ, nta N & P-Channel, thiab tau ntim rau hauv TO-252-4L.

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Product Detail

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WSF6012 MOSFET yog cov cuab yeej ua haujlwm siab nrog kev tsim cov cell ceev. Nws muab RDSON zoo heev thiab rooj vag nqi haum rau feem ntau synchronous puck converter daim ntaub ntawv. Tsis tas li ntawd, nws ua tau raws li RoHS thiab Cov Khoom Siv Ntsuab, thiab tuaj nrog 100% EAS lav rau tag nrho cov haujlwm thiab kev ntseeg siab.

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Advanced Trench Technology nrog High Cell Density, Super Low Gate Charge, Zoo CdV / dt Effect Decline, 100% EAS Guarantee, thiab Environmentally-Friendly Device Options.

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High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Fais Fab System, Load Switch, E-luam yeeb, wireless charging, motors, khoom siv hluav taws xob thaum muaj xwm ceev, drones, kev kho mob, tsheb chargers, controllers, digital li, khoom siv hauv tsev me, thiab cov khoom siv hluav taws xob.

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AOS AOD 603A,

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Cim	Parameter	Kev ntsuas		Chav tsev
Cim	Parameter	N-Channel	P-Channel	Chav tsev
VDS	Dej-qhov chaw Voltage	60	-60	V
VGS	Rooj vag-Qhov Chaw Voltage	± 20	± 20	V
ID@TC = 25 ℃	Nruam Drain Tam Sim No, VGS @ 10V1	20	-15	A
ID@TC = 70 ℃	Nruam Drain Tam Sim No, VGS @ 10V1	15	-10	A
IDM	Pulsed Drain Current2	46	-36	A
EAS	Tib Pulse Avalanche Zog 3	200	180	mJ
IAS	Avalanche tam sim no	59	-50	A
PD@TC = 25 ℃	Total Power Dissipation 4	34.7 ib	34.7 ib	W
TSTG	Cia qhov kub thiab txias	-55 rau 150	-55 rau 150	℃
TJ	Kev khiav hauj lwm Junction Temperature Range	-55 rau 150	-55 rau 150	℃

Cim	Parameter	Cov xwm txheej	Min.	Ntaus.	Max.	Chav tsev
BVDSS	Dej-qhov chaw tawg Voltage	VGS=0V, ID=250uA	60	---	---	V
△ BVDSS/△ TJ	BVDSS Kub Coefficient	Siv rau 25 ℃, ID = 1mA	---	0.063 ua	---	V / ℃
RDS (ON)	Static Drain-Source On-Resistance2	VGS=10V, ID=8A	---	28	37	mΩ
RDS (ON)	Static Drain-Source On-Resistance2	VGS = 4.5V, ID = 5A	---	37	45	mΩ
VGS(th)	Gate Threshold Voltage	VGS = VDS, ID = 250uA	1	---	2.5	V
△ VGS(th)	VGS(th) Temperature Coefficient	VGS = VDS, ID = 250uA	---	-5.24	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS = 48V, VGS = 0V, TJ = 25 ℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS = 48V, VGS = 0V, TJ = 55 ℃	---	---	5	uA
IGSS	Rooj vag-Source Leakage Current	VGS = ± 20V, VDS = 0V	---	---	± 100	nA
gfs ua	Forward Transconductance	VDS=5V, ID=8A	---	21	---	S
Rg	Qhov rooj tiv thaiv	VDS=0V, VGS=0V, f=1MHz	---	3.0	4.5	Ω
Qg	Tag nrho lub rooj vag Charge (4.5V)	VDS=48V, VGS=4.5V, ID=8A	---	12.6	20	nC
Qgs	Gate-Source Charge		---	3.5	---
Qgd	Rooj vag-Drain Charge		---	6.3	---
Td (rau)	Tig-On ncua sij hawm	VDD = 30V, VGS = 4.5V, RG = 3.3Ω, ID = 1A	---	8	---	ns
Tr	Sawv Sijhawm		---	14.2	---
Td (tawm)	Tig-Off Ncua Sijhawm		---	24.6 ib	---
Tf	Caij nplooj zeeg		---	4.6	---
Cis	Input Capacitance	VDS=15V, VGS=0V, f=1MHz	---	670 ib	---	pF
Coss	Tso zis Capacitance		---	70	---
Crss	Rov qab Hloov Capacitance		---	35	---