WSF4022 Dual N-Channel 40V 20A TO-252-4L WINSOK MOSFET
Kev piav qhia dav dav
WSF4022 yog qhov ua tau zoo tshaj plaws trench Dual N-Ch MOSFET nrog cov xov tooj ntawm tes siab heev, uas muab RDSON zoo heev thiab lub rooj vag them nqi rau feem ntau ntawm cov ntaub ntawv hloov pauv synchronous buck converter.The WSF4022 ua tau raws li RoHS thiab Green Khoom yuav tsum tau 100% EAS lav nrog kev ua haujlwm puv. kev ntseeg tau pom zoo.
Nta
Rau Ntxuam Pre-driver H-Bridge, Tsav Tsheb, Synchronous Rectification, E-luam yeeb, wireless charging, motors, khoom siv hluav taws xob thaum muaj xwm ceev, drones, kev kho mob, tsheb chargers, controllers, digital cov khoom, khoom siv hauv tsev me, khoom siv hluav taws xob.
Daim ntawv thov
Rau Ntxuam Pre-driver H-Bridge, Tsav Tsheb, Synchronous Rectification, E-luam yeeb, wireless charging, motors, khoom siv hluav taws xob thaum muaj xwm ceev, drones, kev kho mob, tsheb chargers, controllers, digital cov khoom, khoom siv hauv tsev me, khoom siv hluav taws xob.
cov khoom siv tooj
AOS
Cov tsis tseem ceeb
| Cim | Parameter | Kev ntsuas | Chav tsev | |
| VDS | Dej-qhov chaw Voltage | 40 | V | |
| VGS | Rooj vag-Qhov Chaw Voltage | ± 20 | V | |
| ID | Dej ntws tam sim no (Nruam) * AC | TC = 25°C | 20 * | A |
| ID | Dej ntws tam sim no (Nruam) * AC | TC = 100 ° C | 20 * | A |
| ID | Dej ntws tam sim no (Nruam) * AC | TAS = 25°C | 12.2 | A |
| ID | Dej ntws tam sim no (Nruam) * AC | TSO = 70°C | 10.2 | A |
| IMA | Pulsed Drain Current | TC = 25°C | 80 * | A |
| EASb | Tib Pulse Avalanche Zog | L = 0.5 mH | 25 | mJ |
| IAS b | Avalanche tam sim no | L = 0.5 mH | 17.8 ib | A |
| PD | Lub zog siab tshaj plaws Dissipation | TC = 25°C | 39.4 ib | W |
| PD | Lub zog siab tshaj plaws Dissipation | TC = 100 ° C | 19.7 ib | W |
| PD | Lub zog Dissipation | TAS = 25°C | 6.4 | W |
| PD | Lub zog Dissipation | TSO = 70°C | 4.2 | W |
| TJ | Kev khiav hauj lwm Junction Temperature Range | 175 | ℃ | |
| TSTG | Kev khiav hauj lwm kub / Cia kub | -55-175 | ℃ | |
| RJA b | Thermal Resistance Junction-Ambient | Steady State c | 60 | ℃ / W |
| RθJC | Thermal Resistance Junction rau Case | 3.8 | ℃ / W |
| Cim | Parameter | Cov xwm txheej | Min. | Ntaus. | Max. | Chav tsev |
| Static | ||||||
| V(BR)DSS | Dej-qhov chaw tawg Voltage | VGS = 0V, ID = 250μA | 40 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 32V, VGS = 0V | 1 | µA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 32V, VGS = 0V, TJ = 85°C | 30 | µA | ||
| IGSS | Gate Leakage Current | VGS = ± 20V, VDS = 0V | ± 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1.1 | 1.6 | 2.5 | V |
| RDS(on) d | Drain-Source On-state Resistance | VGS = 10V, ID = 10A | 16 | 21 | mΩ | |
| VGS = 4.5V, ID = 5A | 18 | 25 | mΩ | |||
| Rooj vag Chargee | ||||||
| Qg | Total Gate Charge | VDS = 20V, VGS = 4.5V, ID = 10A | 7.5 | nC | ||
| Qgs | Gate-Source Charge | 3.24 | nC | |||
| Qgd | Rooj vag-Drain Charge | 2.75 ib | nC | |||
| Dynamice | ||||||
| Cis | Input Capacitance | VGS=0V, VDS=20V, f=1MHz | 8 15 | pF | ||
| Coss | Tso zis Capacitance | 95 | pF | |||
| Crss | Rov qab Hloov Capacitance | 60 | pF | |||
| td (rau) | Tig-on ncua sij hawm | VDD = 20V, VGEN = 10V, IDS = 1A, RG = 6Ω, RL = 20Ω. | 7.8 ib | ns | ||
| tr | Tig-on Rise Time | 6.9 | ns | |||
| td (tawm) | Teem sijhawm ncua sijhawm | 22.4 ib | ns | |||
| tf | Tig-tawm lub caij nplooj zeeg | 4.8 | ns | |||
| Diode | ||||||
| VSDd | Diode Forward Voltage | ISD=1A, VGS=0V | 0.75 ib | 1.1 | V | |
| ua tr | Input Capacitance | IDS=10A, dlSD/dt=100A/µs | 13 | ns | ||
| Qrr | Tso zis Capacitance | 8.7 ib | nC | |||
