WSD80100DN56 N-channel 80V 100A DFN5X6-8 WINSOK MOSFET

cov khoom

WSD80100DN56 N-channel 80V 100A DFN5X6-8 WINSOK MOSFET

piav qhia luv luv:

Tshooj Naj Npawb:WSD80100DN56

BVDSS:80v ua

ID:100 A

RDSON:6,1m wb

Channel:N-channel

Pob:DFN5X6-8


Product Detail

Daim ntawv thov

Khoom cim npe

WINSOK MOSFET cov khoom saib xyuas

Qhov voltage ntawm WSD80100DN56 MOSFET yog 80V, tam sim no yog 100A, qhov tsis kam yog 6.1mΩ, channel yog N-channel, thiab pob yog DFN5X6-8.

WINSOK MOSFET daim ntawv thov thaj chaw

Drones MOSFET, motors MOSFET, automotive electronics MOSFET, cov khoom siv loj MOSFET.

WINSOK MOSFET sib raug rau lwm cov khoom siv npe

AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL1N8F7.POTENS Semiconductor MOSFET PDC7966X.

MOSFET parameter

Cim

Parameter

Kev ntsuas

Chav tsev

VDS

Dej-qhov chaw Voltage

80

V

VGS

Gate-Saurua Voltage

±20

V

TJ

Qhov siab tshaj qhov kub thiab txias

150

°C

ID

Cia qhov kub thiab txias

-55 rau 150

°C

ID

Nruam Drain Current, VGS= 10V, TC= 25°C

100

A

Nruam Drain Current, VGS= 10V, TC= 100 ° C

80

A

IDM

Pulsed Drain Current, TC= 25°C

380

A

PD

Maximum Fais Fab Dissipation, TC= 25°C

200

W

RqJC

Thermal Resistance-Kev sib tshuam rau Case

0.8 ua

°C

EAS

Avalanche Zog, Tib mem tes, L = 0.5mH

800

mJ

 

Cim

Parameter

Cov xwm txheej

Min.

Ntaus.

Max.

Chav tsev

BVDSS

Dej-qhov chaw tawg Voltage VGS= 0 V, ibD= 250 UA

80

---

---

V

BVDSS/△TJ

BVDSSKub Coefficient Reference rau 25, kuvD= 1 mA

---

0.043 ib

---

V/

RDS (ON)

Static Drain-Source On-Resistance2 VGS = 10V, ID= 40 A

---

6.1

8.5

mΩ

VGS(th)

Gate Threshold Voltage VGS=VDS, kuvD= 250 UA

2.0

3.0

4.0

V

VGS (th)

VGS (th)Kub Coefficient

---

-6.94

---

mV/

IDSS

Drain-Source Leakage Current VDS= 48V, VGS= 0V, tJ= 25

---

---

2

uA

VDS= 48V, VGS= 0V, tJ= 55

---

---

10

IGSS

Rooj vag-Source Leakage Current VGS=±20 V, ibDS= 0 V

---

---

±100

nA

gfs ua

Forward Transconductance VDS= 5 V, ibD= 20 A

80

---

---

S

Qg

Tag nrho lub rooj vag Charge (10V) VDS= 30V, VGS= 10V, ID= 30 A

---

125

---

nC

Qgs

Gate-Source Charge

---

24

---

Qgd

Rooj vag-Drain Charge

---

30

---

Td (rau)

Tig-On ncua sij hawm VDD= 30V, VGS= 10V,

RG= 2.5Ω, kuvD= 2A, RL = 15Ω.

---

20

---

ns

Tr

Sawv Sijhawm

---

19

---

Td (tawm)

Tig-Off Ncua Sijhawm

---

70

---

Tf

Caij nplooj zeeg

---

30

---

Cyog

Input Capacitance VDS= 25V, VGS= 0V, f = 1MHz

---

4900 ib

---

pF

Coss

Tso zis Capacitance

---

410

---

Crss

Rov qab Hloov Capacitance

---

315

---


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