WSD75N12GDN56 N-channel 120V 75A DFN5X6-8 WINSOK MOSFET

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WSD75N12GDN56 N-channel 120V 75A DFN5X6-8 WINSOK MOSFET

piav qhia luv luv:

Tshooj Naj Npawb:WSD75N12GDN56

BVDSS:120 V

ID:75a ib

RDSON:6m0 ua

Channel:N-channel

Pob:DFN5X6-8


Product Detail

Daim ntawv thov

Khoom cim npe

WINSOK MOSFET cov khoom saib xyuas

Qhov voltage ntawm WSD75N12GDN56 MOSFET yog 120V, tam sim no yog 75A, qhov tsis kam yog 6mΩ, channel N-channel, thiab pob yog DFN5X6-8.

WINSOK MOSFET daim ntawv thov thaj chaw

Cov khoom siv kho mob MOSFET, drones MOSFET, PD cov khoom siv hluav taws xob MOSFET, LED fais fab mov MOSFET, cov khoom siv MOSFET.

MOSFET daim ntawv thov teb WINSOK MOSFET sib raug rau lwm cov khoom siv npe

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.

MOSFET parameter

Cim

Parameter

Kev ntsuas

Chav tsev

VDSS

Dej-rau-qhov Voltage

120

V

VGS

Rooj vag-rau-qhov Voltage

± 20

V

ID

1

Nruam dej ntws tam sim no (Tc = 25 ℃)

75

A

ID

1

Nruam dej ntws tam sim no (Tc = 70 ℃)

70

A

IDM

Pulsed Drain Current

320

A

IAR

Tib mem tes avalanche tam sim no

40

A

EASA

Tib mem tes avalanche zog

240

mJ

PD

Lub zog Dissipation

125

W

TJ, Tsg

Kev khiav hauj lwm Junction thiab cia kub ntau yam

-55 rau 150

TL

Qhov kub siab tshaj plaws rau Soldering

260

RθJC

Thermal Resistance, Junction-rau-Case

1.0

℃ / W

RJA

Thermal Resistance, Junction-rau-Ambient

50

℃ / W

 

Cim

Parameter

Kev Xeem

Min.

Ntaus.

Max.

Chav tsev

VDSS

Dej ntws mus rau qhov chaw tawg Voltage VGS=0V, ID=250µA

120

--

--

V

IDSS

Drain mus rau qhov chaw Leakage Current VDS = 120V, VGS = 0V

--

--

1

µA

IGSS (F)

Rooj vag mus rau qhov chaw Forward Leakage VGS = + 20V

--

--

100

nA

IGSS (R)

Rooj vag mus rau qhov chaw Reverse Leakage VGS = -20V

--

--

-100

nA

VGS(TH)

Gate Threshold Voltage VDS = VGS, ID = 250µA

2.5

3.0

3.5

V

RDS(ON) 1

Drain-rau-Source On-Resistance VGS = 10V, ID = 20A

--

6.0

6.8

gFS ua

Forward Transconductance VDS = 5V, ID = 50A  

130

--

S

Cis

Input Capacitance VGS = 0V VDS = 50V f =1.0MHz zaus

--

4282 ib

--

pF

Coss

Tso zis Capacitance

--

429 ib

--

pF

Crss

Rov qab Hloov Capacitance

--

17

--

pF

Rg

Rooj vag tsis kam

--

2.5

--

Ω

td(ON)

Tig-on ncua sij hawm

ID = 20A VDS = 50V VGS =

10V RG = 5Ω

--

20

--

ns

tr

Sawv Sijhawm

--

11

--

ns

td (OFF)

Tig-Off Ncua Sijhawm

--

55

--

ns

tf

Caij nplooj zeeg

--

28

--

ns

Qg

Total Gate Charge VGS = 0 ~ 10V VDS = 50VID = 20A

--

61.4 ib

--

nC

Qgs

Gate Source Charge

--

17.4 ib

--

nC

Qgd

Rooj vag Drain Charge

--

14.1

--

nC

IS

Diode Forward Tam sim no TC = 25 ° C

--

--

100

A

ISM

Diode Pulse Tam sim no

--

--

320

A

VSD

Diode Forward Voltage IS = 6.0A, VGS = 0V

--

--

1.2

V

ua tr

Rov qab lub sijhawm rov qab IS = 20A, VDD = 50V dIF/dt=100A/μs

--

100

--

ns

Qrr

Rov qab them nyiaj rov qab

--

250

--

nC


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