WSD75N12GDN56 N-channel 120V 75A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET cov khoom saib xyuas
Qhov voltage ntawm WSD75N12GDN56 MOSFET yog 120V, tam sim no yog 75A, qhov tsis kam yog 6mΩ, channel yog N-channel, thiab pob yog DFN5X6-8.
WINSOK MOSFET daim ntawv thov thaj chaw
Cov khoom siv kho mob MOSFET, drones MOSFET, PD cov khoom siv hluav taws xob MOSFET, LED fais fab mov MOSFET, cov khoom siv MOSFET.
MOSFET daim ntawv thov teb WINSOK MOSFET sib raug rau lwm cov khoom siv npe
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.
MOSFET parameter
| Cim | Parameter | Kev ntsuas | Chav tsev |
| VDSS | Dej-rau-qhov Voltage | 120 | V |
| VGS | Rooj vag-rau-qhov Voltage | ± 20 | V |
| ID | 1 Nruam dej ntws tam sim no (Tc = 25 ℃) | 75 | A |
| ID | 1 Nruam dej ntws tam sim no (Tc = 70 ℃) | 70 | A |
| IDM | Pulsed Drain Current | 320 | A |
| IAR | Tib mem tes avalanche tam sim no | 40 | A |
| EASA | Tib mem tes avalanche zog | 240 | mJ |
| PD | Lub zog Dissipation | 125 | W |
| TJ, Tsg | Kev khiav hauj lwm Junction thiab cia kub ntau yam | -55 rau 150 | ℃ |
| TL | Qhov kub siab tshaj plaws rau Soldering | 260 | ℃ |
| RθJC | Thermal Resistance, Junction-rau-Case | 1.0 | ℃ / W |
| RJA | Thermal Resistance, Junction-rau-Ambient | 50 | ℃ / W |
| Cim | Parameter | Kev Xeem | Min. | Ntaus. | Max. | Chav tsev |
| VDSS | Dej ntws mus rau qhov chaw tawg Voltage | VGS=0V, ID=250µA | 120 | -- | -- | V |
| IDSS | Drain mus rau qhov chaw Leakage Current | VDS = 120V, VGS = 0V | -- | -- | 1 | µA |
| IGSS (F) | Rooj vag mus rau qhov chaw Forward Leakage | VGS = + 20V | -- | -- | 100 | nA |
| IGSS (R) | Rooj vag mus rau qhov chaw Reverse Leakage | VGS = -20V | -- | -- | -100 | nA |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250µA | 2.5 | 3.0 | 3.5 | V |
| RDS(ON) 1 | Drain-rau-Source On-Resistance | VGS = 10V, ID = 20A | -- | 6.0 | 6.8 | mΩ |
| gFS ua | Forward Transconductance | VDS = 5V, ID = 50A | 130 | -- | S | |
| Cis | Input Capacitance | VGS = 0V VDS = 50V f =1.0MHz zaus | -- | 4282 ib | -- | pF |
| Coss | Tso zis Capacitance | -- | 429 ib | -- | pF | |
| Crss | Rov qab Hloov Capacitance | -- | 17 | -- | pF | |
| Rg | Rooj vag tsis kam | -- | 2.5 | -- | Ω | |
| td(ON) | Tig-on ncua sij hawm | ID = 20A VDS = 50V VGS = 10V RG = 5Ω | -- | 20 | -- | ns |
| tr | Sawv Sijhawm | -- | 11 | -- | ns | |
| td (OFF) | Tig-Off Ncua Sijhawm | -- | 55 | -- | ns | |
| tf | Caij nplooj zeeg | -- | 28 | -- | ns | |
| Qg | Total Gate Charge | VGS = 0 ~ 10V VDS = 50VID = 20A | -- | 61.4 ib | -- | nC |
| Qgs | Gate Source Charge | -- | 17.4 ib | -- | nC | |
| Qgd | Rooj vag Drain Charge | -- | 14.1 | -- | nC | |
| IS | Diode Forward Tam sim no | TC = 25 ° C | -- | -- | 100 | A |
| ISM | Diode Pulse Tam sim no | -- | -- | 320 | A | |
| VSD | Diode Forward Voltage | IS = 6.0A, VGS = 0V | -- | -- | 1.2 | V |
| ua tr | Rov qab lub sijhawm rov qab | IS = 20A, VDD = 50V dIF/dt=100A/μs | -- | 100 | -- | ns |
| Qrr | Rov qab them nyiaj rov qab | -- | 250 | -- | nC |
