WSD75100DN56 N-channel 75V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET cov khoom saib xyuas
Qhov voltage ntawm WSD75100DN56 MOSFET yog 75V, tam sim no yog 100A, qhov tsis kam yog 5.3mΩ, channel yog N-channel, thiab pob yog DFN5X6-8.
WINSOK MOSFET daim ntawv thov thaj chaw
E-luam yeeb MOSFET, wireless charging MOSFET, drones MOSFET, kev kho mob MOSFET, tsheb chargers MOSFET, controllers MOSFET, cov khoom siv MOSFET, cov khoom siv hauv tsev me me MOSFET, cov khoom siv hluav taws xob MOSFET.
WINSOK MOSFET sib raug rau lwm cov khoom siv npe
AOS MOSFET AON6276,AON6278,AON628,AON6282,AON6448.Onsemi,FAIRCHILD MOSFET NVMFS6H824N.STMicroelectronics MOSFET STL1N8F7.INFINEON,IR MOSFET3BSC42BTEM wb 7966x.
MOSFET parameter
| Cim | Parameter | Kev ntsuas | Chav tsev |
| VDS | Dej-qhov chaw Voltage | 75 | V |
| VGS | Gate-Saurua Voltage | ±25 | V |
| TJ | Qhov siab tshaj qhov kub thiab txias | 150 | °C |
| ID | Cia qhov kub thiab txias | -55 rau 150 | °C |
| IS | Diode Nruam Forward Tam Sim No, TC= 25°C | 50 | A |
| ID | Nruam Drain Current, VGS= 10V, TC= 25°C | 100 | A |
| Nruam Drain Current, VGS= 10V, TC= 100 ° C | 73 | A | |
| IDM | Pulsed Drain Current, TC= 25°C | 400 | A |
| PD | Maximum Fais Fab Dissipation, TC= 25°C | 155 | W |
| Maximum Fais Fab Dissipation, TC= 100 ° C | 62 | W | |
| RθJA | Thermal Resistance-Junction to Ambient, t = 10s ̀ | 20 | °C |
| Thermal Resistance-Kev sib tshuam rau Ambient, Steady State | 60 | °C | |
| RqJC | Thermal Resistance-Kev sib tshuam rau Case | 0.8 ua | °C |
| IAS | Avalanche tam sim no, Tib mem tes, L = 0.5mH | 30 | A |
| EAS | Avalanche Zog, Tib mem tes, L = 0.5mH | 225 | mJ |
| Cim | Parameter | Cov xwm txheej | Min. | Ntaus. | Max. | Chav tsev |
| BVDSS | Dej-qhov chaw tawg Voltage | VGS= 0 V, ibD= 250 ua | 75 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKub Coefficient | Reference rau 25℃, kuvD= 1 mA | --- | 0.043 ib | --- | V/℃ |
| RDS (ON) | Static Drain-Source On-Resistance2 | VGS = 10V, ID= 25 A | --- | 5.3 | 6.4 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, kuvD= 250 ua | 2.0 | 3.0 | 4.0 | V |
| △VGS (th) | VGS (th)Kub Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS= 48V, VGS= 0V, tJ= 25℃ | --- | --- | 2 | uA |
| VDS= 48V, VGS= 0V, tJ= 55℃ | --- | --- | 10 | |||
| IGSS | Rooj vag-Source Leakage Current | VGS=±20 V, ibDS= 0 V | --- | --- | ±100 | nA |
| gfs ua | Forward Transconductance | VDS= 5 V, ibD= 20 A | --- | 50 | --- | S |
| Rg | Qhov rooj tiv thaiv | VDS= 0V, VGS= 0V, f = 1MHz | --- | 1.0 | 2 | Ω |
| Qg | Tag nrho lub rooj vag Charge (10V) | VDS= 20V, VGS= 10V, ID= 40 A | --- | 65 | 85 | nC |
| Qgs | Gate-Source Charge | --- | 20 | --- | ||
| Qgd | Rooj vag-Drain Charge | --- | 17 | --- | ||
| Td (rau) | Tig-On ncua sij hawm | VDD= 30V, VGEN= 10V, RG=1Ω, kuvD= 1A, RL = 15Ω. | --- | 27 | 49 | ns |
| Tr | Sawv Sijhawm | --- | 14 | 26 | ||
| Td (tawm) | Tig-Off Ncua Sijhawm | --- | 60 | 108 | ||
| Tf | Caij nplooj zeeg | --- | 37 | 67 | ||
| Cyog | Input Capacitance | VDS= 20V, VGS= 0V, f = 1MHz | 3 450 | 3500 | 4 550 | pF |
| Coss | Tso zis Capacitance | 245 | 395 ib | 652 ib | ||
| Crss | Rov qab Hloov Capacitance | 100 | 195 | 250 |
