WSD60N12GDN56 N-channel 120V 70A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET cov khoom saib xyuas
Qhov voltage ntawm WSD60N12GDN56 MOSFET yog 120V, tam sim no yog 70A, qhov tsis kam yog 10mΩ, channel yog N-channel, thiab pob yog DFN5X6-8.
WINSOK MOSFET daim ntawv thov thaj chaw
Cov khoom siv kho mob MOSFET, drones MOSFET, PD cov khoom siv hluav taws xob MOSFET, LED fais fab mov MOSFET, cov khoom siv MOSFET.
MOSFET daim ntawv thov teb WINSOK MOSFET sib raug rau lwm cov khoom siv npe
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.POTENS Semiconductor MOSFET PDC974X.
MOSFET parameter
Cim | Parameter | Kev ntsuas | Chav tsev |
VDS | Dej-qhov chaw Voltage | 120 | V |
VGS | Rooj vag-Qhov Chaw Voltage | ± 20 | V |
ID@TC= 25 ℃ | Nruam Drain Tam Sim No | 70 | A |
IDP | Pulsed Drain Current | 150 | A |
EAS | Avalanche Zog, Tib mem tes | 53.8 ib | mJ |
PD@TC= 25 ℃ | Total Power Dissipation | 140 | W |
TSTG | Cia qhov kub thiab txias | -55 rau 150 | ℃ |
TJ | Kev khiav hauj lwm Junction Temperature Range | -55 rau 150 | ℃ |
Cim | Parameter | Cov xwm txheej | Min. | Ntaus. | Max. | Chav tsev |
BVDSS | Dej-qhov chaw tawg Voltage | VGS= 0 V, ibD= 250 UA | 120 | --- | --- | V |
Static Drain-Source On-Resistance | VGS=10V, ID=10A. | --- | 10 | 15 | mΩ | |
RDS (ON) | VGS = 4.5V, ID = 10A. | --- | 18 | 25 | mΩ | |
VGS(th) | Gate Threshold Voltage | VGS=VDS, kuvD= 250 UA | 1.2 | --- | 2.5 | V |
IDSS | Drain-Source Leakage Current | VDS= 80V, VGS= 0V, tJ= 25 ℃ | --- | --- | 1 | uA |
IGSS | Rooj vag-Source Leakage Current | VGS= ± 20V, VDS= 0 V | --- | --- | ± 100 | nA |
Qg | Tag nrho lub rooj vag Charge (10V) | VDS= 50V, VGS= 10V, ID= 25 A | --- | 33 | --- | nC |
Qgs | Gate-Source Charge | --- | 5.6 | --- | ||
Qgd | Rooj vag-Drain Charge | --- | 7.2 | --- | ||
Td (rau) | Tig-On ncua sij hawm | VDD= 50V, VGS= 10V, RG= 2Ω, ibD= 25 A | --- | 22 | --- | ns |
Tr | Sawv Sijhawm | --- | 10 | --- | ||
Td (tawm) | Tig-Off Ncua Sijhawm | --- | 85 | --- | ||
Tf | Caij nplooj zeeg | --- | 112 | --- | ||
Cyog | Input Capacitance | VDS= 50V, VGS= 0V, f = 1MHz | --- | 2640 ib | --- | pF |
Coss | Tso zis Capacitance | --- | 330 | --- | ||
Crss | Rov qab Hloov Capacitance | --- | 11 | --- | ||
IS | Nruam Source Tam sim no | VG=VD= 0V, Force Current | --- | --- | 50 | A |
ISP | Pulsed Source Tam sim no | --- | --- | 150 | A | |
VSD | Diode Forward Voltage | VGS= 0 V, ibS= 12A, TJ= 25 ℃ | --- | --- | 1.3 | V |
trr | Rov qab lub sij hawm rov qab | IF=25A,dI/dt=100A/µs, TJ= 25 ℃ | --- | 62 | --- | nS |
Qrr | Rov qab them nyiaj rov qab | --- | 135 | --- | nC |