WSD60N10GDN56 N-channel 100V 60A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET cov khoom saib xyuas
Qhov voltage ntawm WSD60N10GDN56 MOSFET yog 100V, tam sim no yog 60A, qhov tsis kam yog 8.5mΩ, channel yog N-channel, thiab pob yog DFN5X6-8.
WINSOK MOSFET daim ntawv thov thaj chaw
E-luam yeeb MOSFET, wireless charging MOSFET, motors MOSFET, drones MOSFET, kev kho mob MOSFET, tsheb chargers MOSFET, controllers MOSFET, cov khoom siv MOSFET, cov khoom siv hauv tsev me me MOSFET, cov khoom siv hluav taws xob MOSFET.
MOSFET daim ntawv thov teb WINSOK MOSFET sib raug rau lwm cov khoom siv npe
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MOSFET parameter
| Cim | Parameter | Kev ntsuas | Chav tsev |
| VDS | Dej-qhov chaw Voltage | 100 | V |
| VGS | Rooj vag-Qhov Chaw Voltage | ± 20 | V |
| ID@TC= 25 ℃ | Nruam Drain Current | 60 | A |
| IDP | Pulsed Drain Current | 210 | A |
| EAS | Avalanche Zog, Tib mem tes | 100 | mJ |
| PD@TC= 25 ℃ | Total Power Dissipation | 125 | W |
| TSTG | Cia qhov kub thiab txias | -55 rau 150 | ℃ |
| TJ | Kev khiav hauj lwm Junction Temperature Range | -55 rau 150 | ℃ |
| Cim | Parameter | Cov xwm txheej | Min. | Ntaus. | Max. | Chav tsev |
| BVDSS | Dej-qhov chaw tawg Voltage | VGS= 0 V, ibD= 250 ua | 100 | --- | --- | V |
| Static Drain-Source On-Resistance | VGS=10V, ID=10A. | --- | 8.5 | 10.0 | mΩ | |
| RDS (ON) | VGS = 4.5V, ID = 10A. | --- | 9.5 ib | 12.0 ib | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, kuvD= 250 ua | 1.0 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS= 80V, VGS= 0V, tJ= 25 ℃ | --- | --- | 1 | uA |
| IGSS | Rooj vag-Source Leakage Current | VGS= ± 20V, VDS= 0 V | --- | --- | ± 100 | nA |
| Qg | Tag nrho lub rooj vag Charge (10V) | VDS= 50V, VGS= 10V, ID= 25 A | --- | 49.9 ib | --- | nC |
| Qgs | Gate-Source Charge | --- | 6.5 | --- | ||
| Qgd | Rooj vag-Drain Charge | --- | 12.4 | --- | ||
| Td (rau) | Tig-On ncua sij hawm | VDD= 50V, VGS= 10V,RG= 2.2Ω, ibD= 25 A | --- | 20.6 ib | --- | ns |
| Tr | Sawv Sijhawm | --- | 5 | --- | ||
| Td (tawm) | Tig-Off Ncua Sijhawm | --- | 51.8 ib | --- | ||
| Tf | Caij nplooj zeeg | --- | 9 | --- | ||
| Cyog | Input Capacitance | VDS= 50V, VGS= 0V, f = 1MHz | --- | 2604 ib | --- | pF |
| Coss | Tso zis Capacitance | --- | 362 ib | --- | ||
| Crss | Rov qab Hloov Capacitance | --- | 6.5 | --- | ||
| IS | Nruam Source Tam sim no | VG=VD= 0V, Force Current | --- | --- | 60 | A |
| ISP | Pulsed Source Tam sim no | --- | --- | 210 | A | |
| VSD | Diode Forward Voltage | VGS= 0 V, ibS= 12A, TJ= 25 ℃ | --- | --- | 1.3 | V |
| trr | Rov qab lub sij hawm rov qab | IF=12A,dI/dt=100A/µs, TJ= 25 ℃ | --- | 60.4 ib | --- | nS |
| Qrr | Rov qab them nyiaj rov qab | --- | 106.1 ib | --- | nC |
