WSD6060DN56 N-channel 60V 65A DFN5X6-8 WINSOK MOSFET

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Tshooj Naj Npawb:WSD6060DN56

BVDSS:60v ua

ID:65 A

RDSON:7,5m 0

Channel:N-channel

Pob:DFN5X6-8

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Product Detail

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WINSOK MOSFET cov khoom saib xyuas

Qhov voltage ntawm WSD6060DN56 MOSFET yog 60V, tam sim no yog 65A, qhov tsis kam yog 7.5mΩ, channel yog N-channel, thiab pob yog DFN5X6-8.

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MOSFET parameter

Cim	Parameter		Kev ntsuas	Chav tsev
Kev Rating
VDSS	Dej-qhov chaw Voltage		60	V
VGSS	Rooj vag-Qhov Chaw Voltage		± 20	V
T_J	Qhov siab tshaj qhov kub thiab txias		150	°C
TSTG	Cia qhov kub thiab txias		-55 rau 150	°C
I_S	Diode Nruam Forward Tam Sim No	T_c= 25°C	30	A
ID	Nruam Drain Current	T_c= 25°C	65	A
ID	Nruam Drain Current	T_c= 70°C	42	A
IB DM b	Pulse Drain Current Tested	T_c= 25°C	250	A
P_D	Lub zog siab tshaj plaws Dissipation	T_c= 25°C	62.5 ib	W
P_D	Lub zog siab tshaj plaws Dissipation	T_C= 70°C	38	W
R_qJL	Thermal Resistance-Kev sib tshuam rau kev coj	Lub Xeev	2.1	° C / W
RqJA	Thermal Resistance-Kev sib tshuam rau Ambient	t £ 10s ib	45	° C / W
RqJA	Thermal Resistance-Kev sib tshuam rau Ambient	Lub Xeev^b	50	° C / W
I AS^d	Avalanche Tam sim no, Tib mem tes	L = 0.5 mH	18	A
E AS d	Avalanche Zog, Tib mem tes	L = 0.5 mH	81	mJ

Cim	Parameter	Kev Xeem		Min.	Ntaus.	Max.	Chav tsev
Cov yam ntxwv zoo li qub
BV_DSS	Dej-qhov chaw tawg Voltage	V_GS= 0 V, ib_DS= 250mA		60	-	-	V
IDSS	Zero Gate Voltage Drain Current	V_DS= 48V, V_GS= 0 V		-	-	1	mA
IDSS	Zero Gate Voltage Drain Current						mA
			T_J= 85°C	-	-	30
VGS(th)	Gate Threshold Voltage	V_DS=V_GS, kuv_DS= 250mA		1.2	1.5	2.5	V
IGSS	Gate Leakage Current	V_GS= ± 20V, V_DS= 0 V		-	-	± 100	nA
R DS(ON) 3	Drain-Source On-state Resistance	V_GS= 10V, I_DS= 20 A		-	7.5	10	m W
R DS(ON) 3	Drain-Source On-state Resistance	V_GS= 4.5V, ib_DS= 15 A		-	10	15	m W
Cov yam ntxwv ntawm Diode
V SD	Diode Forward Voltage	I_SD= 1A, V_GS= 0 V		-	0.75 ib	1.2	V
t_rr	Rov qab lub sij hawm rov qab	I_SD= 20A, dl_SD/dt=100A/µs		-	42	-	ns
Q_rr	Rov qab them nyiaj rov qab	I_SD= 20A, dl_SD/dt=100A/µs		-	36	-	nC
Dynamic yam ntxwv^{3,4 ib}
R_G	Qhov rooj tiv thaiv	V_GS= 0V, V_DS= 0V, F = 1MHz		-	1.5	-	W
C_yog	Input Capacitance	V_GS= 0V, V_DS= 30V, F = 1.0MHz Ω		-	1340 ib	-	pF
C_oss	Tso zis Capacitance			-	270	-
C_rss	Rov qab Hloov Capacitance			-	40	-
td(ON)	Tig-on ncua sij hawm	VDD=30V, IDS=1A, VGEN = 10V, RG = 6 Ω.		-	15	-	ns
t_r	Tig-on Rise Time			-	6	-
td (OFF)	Teem sijhawm ncua sijhawm			-	33	-
t_f	Tig-tawm lub caij nplooj zeeg			-	30	-
Cov yam ntxwv ntawm rooj vag Charge ^{3,4 ib}
Q_g	Total Gate Charge	V_DS= 30V, V_GS= 4.5V, ib_DS= 20 A		-	13	-	nC
Q_g	Total Gate Charge	V_DS= 30V, V_GS= 10V, I_DS= 20 A		-	27	-
Q_gth	Tus nqi ntawm lub rooj vag			-	4.1	-
Q_gs	Gate-Source Charge			-	5	-
Q_gd	Rooj vag-Drain Charge			-	4.2	-