WSD6060DN56 N-channel 60V 65A DFN5X6-8 WINSOK MOSFET

piav qhia luv luv:

Tshooj Naj Npawb:WSD6060DN56

BVDSS:60v ua

ID:65 A

RDSON:7,5m 0

Channel:N-channel

Pob:DFN5X6-8

Xa email rau peb PDF

Product Detail

Daim ntawv thov

Khoom cim npe

WINSOK MOSFET cov khoom saib xyuas

Qhov voltage ntawm WSD6060DN56 MOSFET yog 60V, tam sim no yog 65A, qhov tsis kam yog 7.5mΩ, channel yog N-channel, thiab pob yog DFN5X6-8.

WINSOK MOSFET daim ntawv thov thaj chaw

E-luam yeeb MOSFET, wireless charging MOSFET, motors MOSFET, drones MOSFET, kev kho mob MOSFET, tsheb chargers MOSFET, controllers MOSFET, cov khoom siv MOSFET, cov khoom siv hauv tsev me me MOSFET, cov khoom siv hluav taws xob MOSFET.

WINSOK MOSFET sib raug rau lwm cov khoom siv npe

STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.

MOSFET parameter

Cim	Parameter		Kev ntsuas	Chav tsev
Kev Rating
VDSS	Dej-qhov chaw Voltage		60	V
VGSS	Rooj vag-Qhov Chaw Voltage		± 20	V
T_J	Qhov siab tshaj qhov kub thiab txias		150	°C
TSTG	Cia qhov kub thiab txias		-55 rau 150	°C
I_S	Diode Nruam Forward Tam Sim No	T_c= 25°C	30	A
ID	Nruam Drain Tam Sim No	T_c= 25°C	65	A
ID	Nruam Drain Tam Sim No	T_c= 70°C	42	A
IB DM b	Pulse Drain Current Tested	T_c= 25°C	250	A
P_D	Lub zog siab tshaj plaws Dissipation	T_c= 25°C	62.5 ib	W
P_D	Lub zog siab tshaj plaws Dissipation	T_C= 70°C	38	W
R_qJL	Thermal Resistance-Kev sib tshuam rau kev coj	Lub Xeev	2.1	° C / W
RqJA	Thermal Resistance-Kev sib tshuam rau Ambient	t £ 10s ib	45	° C / W
RqJA	Thermal Resistance-Kev sib tshuam rau Ambient	Lub Xeev^b	50	° C / W
I AS^d	Avalanche Tam sim no, Tib mem tes	L = 0.5 mH	18	A
E AS d	Avalanche Zog, Tib mem tes	L = 0.5 mH	81	mJ

Cim	Parameter	Kev Xeem		Min.	Ntaus.	Max.	Chav tsev
Cov yam ntxwv zoo li qub
BV_DSS	Dej-qhov chaw tawg Voltage	V_GS= 0 V, ib_DS= 250mA		60	-	-	V
IDSS	Zero Gate Voltage Drain Current	V_DS= 48V, V_GS= 0 V		-	-	1	mA
IDSS	Zero Gate Voltage Drain Current						mA
			T_J= 85°C	-	-	30
VGS(th)	Gate Threshold Voltage	V_DS=V_GS, kuv_DS= 250mA		1.2	1.5	2.5	V
IGSS	Gate Leakage Current	V_GS= ± 20V, V_DS= 0 V		-	-	± 100	nA
R DS(ON) 3	Drain-Source On-state Resistance	V_GS= 10V, I_DS= 20 A		-	7.5	10	m W
R DS(ON) 3	Drain-Source On-state Resistance	V_GS= 4.5V, ib_DS= 15 A		-	10	15	m W
Cov yam ntxwv ntawm Diode
V SD	Diode Forward Voltage	I_SD= 1A, V_GS= 0 V		-	0.75 ib	1.2	V
t_rr	Rov qab lub sij hawm rov qab	I_SD= 20A, dl_SD/dt=100A/µs		-	42	-	ns
Q_rr	Rov qab them nyiaj rov qab	I_SD= 20A, dl_SD/dt=100A/µs		-	36	-	nC
Dynamic yam ntxwv^{3,4 ib}
R_G	Qhov rooj tiv thaiv	V_GS= 0V, V_DS=0V,F=1MHz		-	1.5	-	W
C_yog	Input Capacitance	V_GS= 0V, V_DS= 30V, F = 1.0MHz Ω		-	1340 ib	-	pF
C_oss	Tso zis Capacitance			-	270	-
C_rss	Rov qab Hloov Capacitance			-	40	-
td(ON)	Tig-on ncua sij hawm	VDD=30V, IDS=1A, VGEN = 10 V, RG = 6 Ω.		-	15	-	ns
t_r	Tig-on Rise Time			-	6	-
td (OFF)	Teem sijhawm ncua sijhawm			-	33	-
t_f	Tig-tawm lub caij nplooj zeeg			-	30	-
Cov yam ntxwv ntawm rooj vag Charge ^{3,4 ib}
Q_g	Total Gate Charge	V_DS= 30V, V_GS= 4.5V, ib_DS= 20 A		-	13	-	nC
Q_g	Total Gate Charge	V_DS= 30V, V_GS= 10V, I_DS= 20 A		-	27	-
Q_gth	Tus nqi ntawm lub rooj vag			-	4.1	-
Q_gs	Gate-Source Charge			-	5	-
Q_gd	Rooj vag-Drain Charge			-	4.2	-