WSD6040DN56 N-channel 60V 36A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET cov khoom saib xyuas
Qhov voltage ntawm WSD6040DN56 MOSFET yog 60V, tam sim no yog 36A, qhov tsis kam yog 14mΩ, cov channel yog N-channel, thiab pob yog DFN5X6-8.
WINSOK MOSFET daim ntawv thov thaj chaw
E-luam yeeb MOSFET, wireless charging MOSFET, motors MOSFET, drones MOSFET, kev kho mob MOSFET, tsheb chargers MOSFET, controllers MOSFET, cov khoom siv MOSFET, cov khoom siv hauv tsev me me MOSFET, cov khoom siv hluav taws xob MOSFET.
WINSOK MOSFET sib raug rau lwm cov khoom siv npe
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.
MOSFET parameter
| Cim | Parameter | Kev ntsuas | Chav tsev | ||
| VDS | Dej-qhov chaw Voltage | 60 | V | ||
| VGS | Rooj vag-Qhov Chaw Voltage | ± 20 | V | ||
| ID | Nruam Drain Tam Sim No | TC = 25°C | 36 | A | |
| TC = 100 ° C | 22 | ||||
| ID | Nruam Drain Tam Sim No | TAS = 25°C | 8.4 | A | |
| TAWS = 100°C | 6.8 | ||||
| IDMa | Pulsed Drain Current | TC = 25°C | 140 | A | |
| PD | Lub zog siab tshaj plaws Dissipation | TC = 25°C | 37.8 ib | W | |
| TC = 100 ° C | 15.1 | ||||
| PD | Lub zog siab tshaj plaws Dissipation | TAS = 25°C | 2.08 Nws | W | |
| TSO = 70°C | 1.33 | ||||
| IAS c | Avalanche Tam sim no, Tib mem tes | L = 0.5 mH | 16 | A | |
| EASc | Tib Pulse Avalanche Zog | L = 0.5 mH | 64 | mJ | |
| IS | Diode Nruam Forward Tam Sim No | TC = 25°C | 18 | A | |
| TJ | Qhov siab tshaj qhov kub thiab txias | 150 | ℃ | ||
| TSTG | Cia qhov kub thiab txias | -55 rau 150 | ℃ | ||
| RθJAb | Thermal Resistance Junction rau ambient | Lub Xeev | 60 | ℃/W | |
| RθJC | Thermal Resistance-Kev sib tshuam rau Case | Lub Xeev | 3.3 | ℃/W | |
| Cim | Parameter | Cov xwm txheej | Min. | Ntaus. | Max. | Chav tsev | |
| Static | |||||||
| V(BR)DSS | Dej-qhov chaw tawg Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Zero Gate Voltage Drain Current | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ= 85°C | 30 | ||||||
| IGSS | Gate Leakage Current | VGS = ± 20V, VDS = 0V | ± 100 | nA | |||
| Ntawm Yam ntxwv | |||||||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1 | 1.6 | 2.5 | V | |
| RDS (rau)d | Drain-Source On-state Resistance | VGS = 10V, ID = 25A | 14 | 17.5 Nws | mΩ | ||
| VGS = 4.5V, ID = 20A | 19 | 22 | mΩ | ||||
| Hloov | |||||||
| Qg | Total Gate Charge | VDS = 30 V VGS = 10 V ID=25A | 42 | nC | |||
| Qgs | Rooj vag-Sour Charge | 6.4 | nC | ||||
| Qgd | Rooj vag-Drain Charge | 9.6 ib | nC | ||||
| td (rau) | Tig-on ncua sij hawm | VGEN = 10 V VDD = 30 V ID=1A RG = 6 Ω RL = 30 Ω | 17 | ns | |||
| tr | Tig-on Rise Time | 9 | ns | ||||
| td (tawm) | Teem sijhawm ncua sijhawm | 58 | ns | ||||
| tf | Tig-tawm lub caij nplooj zeeg | 14 | ns | ||||
| Rg | Gat tiv | VGS=0V, VDS=0V, f=1MHz | 1.5 | Ω | |||
| Dynamic | |||||||
| Cis | Hauv Capacitance | VGS = 0 V VDS = 30V f = 1MHz | 2100 | pF | |||
| Coss | Tawm Capacitance | 140 | pF | ||||
| Crss | Rov qab Hloov Capacitance | 100 | pF | ||||
| Drain-Source Diode yam ntxwv thiab kev ntsuas siab tshaj plaws | |||||||
| IS | Nruam Source Tam sim no | VG = VD = 0V, Force Current | 18 | A | |||
| ISM | Pulsed Source Current3 | 35 | A | ||||
| VSDd | Diode Forward Voltage | ISD = 20A, VGS = 0V | 0.8 ua | 1.3 | V | ||
| ua tr | Rov qab lub sij hawm rov qab | ISD= 25A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Rov qab them nyiaj rov qab | 33 | nC | ||||
