WSD4280DN22 Dual P-channel -15V -4.6A DFN2X2-6L WINSOK MOSFET

cov khoom

WSD4280DN22 Dual P-channel -15V -4.6A DFN2X2-6L WINSOK MOSFET

piav qhia luv luv:

Tshooj Naj Npawb:WSD4280DN22

BVDSS:-15 V

ID:-4.6 A

RDSON:47m ua 

Channel:Dual P-channel

Pob:DFN2X2-6L


Product Detail

Daim ntawv thov

Khoom cim npe

WINSOK MOSFET cov khoom saib xyuas

Qhov voltage ntawm WSD4280DN22 MOSFET yog -15V, tam sim no yog -4.6A, qhov tsis kam yog 47mΩ, channel yog Dual P-channel, thiab pob yog DFN2X2-6L.

WINSOK MOSFET daim ntawv thov thaj chaw

Bidirectional thaiv kev hloov; DC-DC hloov dua siab tshiab daim ntaub ntawv; Li-roj roj teeb; E-luam yeeb MOSFET, wireless charging MOSFET, tsheb them MOSFET, maub los MOSFET, cov khoom lag luam MOSFET, cov khoom siv hauv tsev me me MOSFET, cov khoom siv hluav taws xob MOSFET.

WINSOK MOSFET sib raug rau lwm cov khoom siv npe

PANJIT MOSFET PJQ 2815

MOSFET parameter

Cim

Parameter

Kev ntsuas

Chav tsev

VDS

Dej-qhov chaw Voltage

-15

V

VGS

Rooj vag-Qhov Chaw Voltage

± 8

V

ID@Tc= 25 ℃

Nruam Drain Current, VGS= -4.5V1 

-4.6

A

IDM

300μS Pulsed Drain Tam sim no, (VGS= -4.5V)

-15

A

PD 

Power Dissipation Derating saum TA = 25°C (Ceeb toom 2)

1.9

W

TSI, TJ 

Cia qhov kub thiab txias

-55 rau 150

RJA

Thermal Resistance Junction-ambient1

65

℃ / W

RθJC

Thermal Resistance Junction-Case1

50

℃ / W

Cov yam ntxwv hluav taws xob (TJ = 25 ℃, tshwj tsis yog sau tseg)

Cim

Parameter

Cov xwm txheej

Min.

Ntaus.

Max.

Chav tsev

BVDSS 

Dej-qhov chaw tawg Voltage VGS= 0 V, ibD= -250 ua

-15

---

---

V

△ BVDSS/△ TJ

BVDSS Kub Coefficient Siv rau 25 ℃, ID= -1 mA

---

-0.01 Nws

---

V / ℃

RDS (ON)

Static Drain-Source On-Resistance2  VGS= -4.5V, ID=-1A

---

47

61

VGS= -2.5V, ID=-1A

---

61

80

VGS= -1.8V, ID=-1A

---

90

150

VGS(th)

Gate Threshold Voltage VGS=VDS, kuvD= -250 ua

-0.4

-0.62

-1.2

V

△ VGS (th) 

VGS (th)Kub Coefficient

---

3.13

---

mV/℃

IDSS

Drain-Source Leakage Current VDS= -10V, VGS= 0V, tJ= 25 ℃

---

---

-1

uA

VDS= -10V, VGS= 0V, tJ= 55 ℃

---

---

-5

IGSS

Rooj vag-Source Leakage Current VGS= ± 12V, VDS= 0 V

---

---

± 100

nA

gfs ua

Forward Transconductance VDS=-5V, ID=-1A

---

10

---

S

Rg 

Qhov rooj tiv thaiv VDS= 0V, VGS= 0V, f = 1MHz

---

2

---

Ω

Qg 

Tag nrho cov rooj vag Charge (-4.5V)

VDS= -10V, VGS= -4.5V, ID= -4.6A

---

9.5 ib

---

nC

Qgs 

Gate-Source Charge

---

1.4

---

Qgd 

Rooj vag-Drain Charge

---

2.3

---

Td (rau)

Tig-On ncua sij hawm VDD= -10V,VGS= -4.5V, RG= 1 Ω

ID= -3.9A,

---

15

---

ns

Tr 

Sawv Sijhawm

---

16

---

Td (tawm)

Tig-Off Ncua Sijhawm

---

30

---

Tf 

Caij nplooj zeeg

---

10

---

Cyog 

Input Capacitance VDS= -10V, VGS= 0V, f = 1MHz

---

781 ib

---

pF

Coss

Tso zis Capacitance

---

98

---

Crss 

Rov qab Hloov Capacitance

---

96

---


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