WSD4098 Dual N-Channel 40V 22A DFN5 * 6-8 WINSOK MOSFET
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Lub WSD4098DN56 yog qhov ua tau zoo tshaj plaws trench Dual N-Ch MOSFET nrog cov xov tooj ntawm tes siab heev, uas muab RDSON zoo heev thiab rooj vag nqi rau feem ntau ntawm cov ntawv thov synchronous puck converter. Lub WSD4098DN56 ua tau raws li RoHS thiab Green Product yuav tsum tau 100% EAS lav nrog tag nrho cov kev ntseeg tau pom zoo.
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Advanced high cell density Trench technology, Super Low Gate Charge, Zoo heev CdV / dt nyhuv poob, 100% EAS Guaranteed, Ntsuab Device Muaj
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High Frequency Point-of-Load Synchronous, Buck Converter rau MB / NB / UMPC / VGA, Networking DC-DC Fais Fab System, Load Switch, E-luam yeeb, wireless charging, motors, drones, kho mob, tsheb chargers, controllers, digital cov khoom, cov khoom siv hauv tsev me, cov khoom siv hluav taws xob.
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AOS 6884
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Cim | Parameter | Kev ntsuas | Chav tsev | |
Kev Rating | ||||
VDSS | Dej-qhov chaw Voltage | 40 | V | |
VGSS | Rooj vag-Qhov Chaw Voltage | ± 20 | V | |
TJ | Qhov siab tshaj qhov kub thiab txias | 150 | °C | |
TSTG | Cia qhov kub thiab txias | -55 rau 150 | °C | |
IS | Diode Nruam Forward Tam Sim No | TAS = 25°C | 11.4 | A |
ID | Nruam Drain Tam Sim No | TAS = 25°C | 22 | A |
TSO = 70°C | 22 | |||
IB DM b | Pulse Drain Current Tested | TAS = 25°C | 88 | A |
PD | Lub zog siab tshaj plaws Dissipation | T. = 25°C | 25 | W |
TC = 70°C | 10 | |||
RqJL | Thermal Resistance-Kev sib tshuam rau kev coj | Lub Xeev | 5 | ° C / W |
RqJA | Thermal Resistance-Kev sib tshuam rau Ambient | t £10s | 45 | ° C / W |
Steady State b | 90 | |||
I AS d | Avalanche Tam sim no, Tib mem tes | L = 0.5 mH | 28 | A |
E AS d | Avalanche Zog, Tib mem tes | L = 0.5 mH | 39.2 ib | mJ |
Cim | Parameter | Kev Xeem | Min. | Ntaus. | Max. | Chav tsev | |
Cov yam ntxwv zoo li qub | |||||||
BVDSS | Dej-qhov chaw tawg Voltage | VGS = 0V, IDS = 250mA | 40 | - | - | V | |
IDSS | Zero Gate Voltage Drain Current | VDS=32V, VGS=0V | - | - | 1 | mA | |
TJ = 85°C | - | - | 30 | ||||
VGS(th) | Gate Threshold Voltage | VDS = VGS, IDS = 250 mA | 1.2 | 1.8 | 2.5 | V | |
IGSS | Gate Leakage Current | VGS = ± 20V, VDS = 0V | - | - | ± 100 | nA | |
R DS(ON) e | Drain-Source On-state Resistance | VGS=10V, IDS=14A | - | 6.8 | 7.8 ib | m W | |
VGS = 4.5V, IDS = 12 A | - | 9.0 ib | 11 | ||||
Cov yam ntxwv ntawm Diode | |||||||
V SD e | Diode Forward Voltage | ISD=1A, VGS=0V | - | 0.75 ib | 1.1 | V | |
ua tr | Rov qab lub sij hawm rov qab | ISD = 20A, dlSD / dt = 100A / µs | - | 23 | - | ns | |
Qrr | Rov qab them nyiaj rov qab | - | 13 | - | nC | ||
Dynamic yam ntxwv f | |||||||
RG | Qhov rooj tiv thaiv | VGS=0V,VDS=0V,F=1MHz | - | 2.5 | - | W | |
Cis | Input Capacitance | VGS = 0V, VDS = 20V, Zaus = 1.0MHz | - | 1370 ib | 1781 ib | pF | |
Coss | Tso zis Capacitance | - | 317 | - | |||
Crss | Rov qab Hloov Capacitance | - | 96 | - | |||
td(ON) | Tig-on ncua sij hawm | VDD = 20V, RL = 20 W, IDS = 1A, VGEN = 10V, RG = 6W | - | 13.8 ib | - | ns | |
tr | Tig-on Rise Time | - | 8 | - | |||
td (OFF) | Teem sijhawm ncua sijhawm | - | 30 | - | |||
tf | Tig-tawm lub caij nplooj zeeg | - | 21 | - | |||
Rooj vag Charge yam ntxwv f | |||||||
Qg | Total Gate Charge | VDS=20V, VGS=10V, IDS=6A | - | 23 | 28 | nC | |
Qg | Total Gate Charge | VDS=20V, VGS=4.5V, IDS=6A | - | 22 | - | ||
Qgth | Tus nqi ntawm lub rooj vag | - | 2.6 | - | |||
Qgs | Gate-Source Charge | - | 4.7 | - | |||
Qgd | Rooj vag-Drain Charge | - | 3 | - |