WSD4080DN56 N-channel 40V 85A DFN5X6-8 WINSOK MOSFET

cov khoom

WSD4080DN56 N-channel 40V 85A DFN5X6-8 WINSOK MOSFET

piav qhia luv luv:

Tshooj Naj Npawb:WSD4080DN56

BVDSS:40v ua

ID:85a ib

RDSON:4.5m 000 Nws 

Channel:N-channel

Pob:DFN5X6-8


Product Detail

Daim ntawv thov

Khoom cim npe

WINSOK MOSFET cov khoom saib xyuas

Qhov voltage ntawm WSD4080DN56 MOSFET yog 40V, tam sim no yog 85A, qhov tsis kam yog 4.5mΩ, cov channel yog N-channel, thiab pob yog DFN5X6-8.

WINSOK MOSFET daim ntawv thov thaj chaw

Cov khoom siv me me MOSFET, cov khoom siv tes tuav MOSFET, lub cev muaj zog MOSFET.

WINSOK MOSFET sib raug rau lwm cov khoom siv npe

AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.

MOSFET parameter

Cim

Parameter

Kev ntsuas

Chav tsev

VDS

Dej-qhov chaw Voltage

40

V

VGS

Rooj vag-Qhov Chaw Voltage

± 20

V

ID @TC= 25 ℃

Nruam Drain Current, VGS @10 V1

85

A

ID @TC= 100 ℃

Nruam Drain Current, VGS @10 V1

58

A

IDM

Pulsed Drain Current2

100

A

EAS

Tib Pulse Avalanche Zog3

110.5 Nws

mJ

IAS

Avalanche tam sim no

47

A

PD @TC= 25 ℃

Total Power Dissipation4

52.1 ib

W

TSTG

Cia qhov kub thiab txias

-55 rau 150

TJ

Kev khiav hauj lwm Junction Temperature Range

-55 rau 150

RJA

Thermal Resistance Junction-Ambient1

62

℃ / W

RθJC

Thermal Resistance Junction-Case1

2.4

℃ / W

 

Cim

Parameter

Cov xwm txheej

Min.

Ntaus.

Max.

Chav tsev

BVDSS

Dej-qhov chaw tawg Voltage VGS=0V, ID=250uA

40

---

---

V

RDS (ON)

Static Drain-Source On-Resistance2 VGS = 10V, ID = 10A

---

4.5

6.5

VGS = 4.5V, ID = 5A

---

6.4

8.5

VGS(th)

Gate Threshold Voltage VGS = VDS, ID = 250uA

1.0

---

2.5

V

IDSS

Drain-Source Leakage Current VDS = 32V, VGS = 0V, TJ = 25 ℃

---

---

1

uA

VDS = 32V, VGS = 0V, TJ = 55 ℃

---

---

5

IGSS

Rooj vag-Source Leakage Current VGS = ± 20V, VDS = 0V

---

---

± 100

nA

gfs ua

Forward Transconductance VDS=10V, ID=5A

---

27

---

S

Qg

Tag nrho lub rooj vag Charge (4.5V) VDS=20V, VGS=4.5V, ID=10A

---

20

---

nC

Qgs

Gate-Source Charge

---

5.8

---

Qgd

Rooj vag-Drain Charge

---

9.5 ib

---

Td (rau)

Tig-On ncua sij hawm VDD = 15V, VGS = 10V RG = 3.3ΩID=1A

---

15.2

---

ns

Tr

Sawv Sijhawm

---

8.8 ib

---

Td (tawm)

Tig-Off Ncua Sijhawm

---

74

---

Tf

Caij nplooj zeeg

---

7

---

Cis

Input Capacitance VDS=15V, VGS=0V, f=1MHz

---

2354 ib

---

pF

Coss

Tso zis Capacitance

---

215

---

Crss

Rov qab Hloov Capacitance

---

175

---

IS

Nruam Source Tam sim no1,5 ib VG=VD= 0V, Force Current

---

---

70

A

VSD

Diode Forward Voltage2 VGS=0V, IS=1A, TJ=25 ℃

---

---

1

V


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