WSD40200DN56G N-channel 40V 180A DFN5X6-8 WINSOK MOSFET

cov khoom

WSD40200DN56G N-channel 40V 180A DFN5X6-8 WINSOK MOSFET

piav qhia luv luv:

Tshooj Naj Npawb:WSD40200DN56G

BVDSS:40v ua

ID:180 A

RDSON:1.15 mΩ 

Channel:N-channel

Pob:DFN5X6-8


Product Detail

Daim ntawv thov

Khoom cim npe

WINSOK MOSFET cov khoom saib xyuas

Qhov voltage ntawm WSD40120DN56G MOSFET yog 40V, tam sim no yog 120A, qhov tsis kam yog 1.4mΩ, channel yog N-channel, thiab pob yog DFN5X6-8.

WINSOK MOSFET daim ntawv thov thaj chaw

E-luam yeeb MOSFET, wireless charging MOSFET, drones MOSFET, kev kho mob MOSFET, tsheb chargers MOSFET, controllers MOSFET, cov khoom siv MOSFET, cov khoom siv hauv tsev me me MOSFET, cov khoom siv hluav taws xob MOSFET.

WINSOK MOSFET sib raug rau lwm cov khoom siv npe

AOS MOSFET AON6234,AON6232,AON623.STMicroelectronics MOSFET STL14N4F7AG.POTENS Semiconductor MOSFET PDC496X.

MOSFET parameter

Cim

Parameter

Kev ntsuas

Chav tsev

VDS

Dej-qhov chaw Voltage

40

V

VGS

Gate-Saurua Voltage

±20

V

ID@TC= 25

Nruam Drain Current, VGS@10 V1

120

A

ID@TC= 100

Nruam Drain Current, VGS@10 V1

82

A

IDM

Pulsed Drain Current2

400

A

EAS

Tib Pulse Avalanche Zog3

400

mJ

IAS

Avalanche tam sim no

40

A

PD@TC= 25

Total Power Dissipation4

125

W

TSTG

Cia qhov kub thiab txias

-55 rau 150

TJ

Kev khiav hauj lwm Junction Temperature Range

-55 rau 150

 

Cim

Parameter

Cov xwm txheej

Min.

Ntaus.

Max.

Chav tsev

BVDSS

Dej-qhov chaw tawg Voltage VGS= 0 V, ibD= 250 ua

40

---

---

V

BVDSS/△TJ

BVDSSKub Coefficient Reference rau 25, kuvD= 1 mA

---

0.043 ib

---

V/

RDS (ON)

Static Drain-Source On-Resistance2 VGS = 10V, ID= 20 A

---

1.4

1.8

mΩ

RDS (ON)

Static Drain-Source On-Resistance2 VGS = 4.5V, ID= 20 A

---

2.0

2.6

VGS(th)

Gate Threshold Voltage VGS=VDS, kuvD= 250 ua

1.2

1.6

2.2

V

VGS (th)

VGS (th)Kub Coefficient

---

-6.94

---

mV/

IDSS

Drain-Source Leakage Current VDS= 32V, VGS= 0V, tJ= 25

---

---

1

uA

VDS= 32V, VGS= 0V, tJ= 55

---

---

5

IGSS

Rooj vag-Source Leakage Current VGS=±20 V, ibDS= 0 V

---

---

±100

nA

gfs ua

Forward Transconductance VDS= 5 V, ibD= 20 A

---

53

---

S

Rg

Qhov rooj tiv thaiv VDS= 0V, VGS= 0V, f = 1MHz

---

1.0

---

Ω

Qg

Tag nrho lub rooj vag Charge (10V) VDS= 15V, VGS= 10V, ID= 20 A

---

45

---

nC

Qgs

Gate-Source Charge

---

12

---

Qgd

Rooj vag-Drain Charge

---

18.5 Nws

---

Td (rau)

Tig-On ncua sij hawm VDD= 15V, VGEN= 10V, RG= 3.3Ω, kuvD= 20A, RL = 15Ω.

---

18.5 Nws

---

ns

Tr

Sawv Sijhawm

---

9

---

Td (tawm)

Tig-Off Ncua Sijhawm

---

58.5 ib

---

Tf

Caij nplooj zeeg

---

32

---

Cyog

Input Capacitance VDS= 20V, VGS= 0V, f = 1MHz --- ib 3972 ---

pF

Coss

Tso zis Capacitance

---

1119 ---

Crss

Rov qab Hloov Capacitance

---

82

---

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