WSD4018DN22 P-channel -40V -18A DFN2X2-6L WINSOK MOSFET

cov khoom

WSD4018DN22 P-channel -40V -18A DFN2X2-6L WINSOK MOSFET

piav qhia luv luv:

Tshooj Naj Npawb:WSD4018DN22

BVDSS:-40 V

ID:-18 A

RDSON:26m 0 0 ua 

Channel:P-channel

Pob:DFN2X2-6L


Product Detail

Daim ntawv thov

Khoom cim npe

WINSOK MOSFET cov khoom saib xyuas

Qhov voltage ntawm WSD4018DN22 MOSFET yog -40V, tam sim no yog -18A, qhov tsis kam yog 26mΩ, channel yog P-channel, thiab pob yog DFN2X2-6L.

WINSOK MOSFET daim ntawv thov thaj chaw

Advanced high cell density Trench technology, Super Low Gate Charge, Zoo heev Cdv/dt nyhuv poob Green Device Available, Face recognition equipment MOSFET, e-luam yeeb MOSFET, me me khoom siv hauv tsev MOSFET, tsheb charger MOSFET.

WINSOK MOSFET sib raug rau lwm cov khoom siv npe

AOS MOSFET AON2409, POTENS MOSFET PDB3909L

MOSFET parameter

Cim

Parameter

Kev ntsuas

Chav tsev

VDS

Dej-qhov chaw Voltage

-40

V

VGS

Rooj vag-Qhov Chaw Voltage

± 20

V

ID@Tc= 25 ℃

Nruam Drain Current, VGS@-10V1

-18

A

ID@Tc= 70 ℃

Nruam Drain Current, VGS@-10V1

-14.6

A

IDM

300μS Pulsed Drain Tam sim no, VGS= -4.5V2

54

A

PD@Tc= 25 ℃

Total Power Dissipation3

19

W

TSTG

Cia qhov kub thiab txias

-55 rau 150

TJ

Kev khiav hauj lwm Junction Temperature Range

-55 rau 150

Cov yam ntxwv hluav taws xob (TJ = 25 ℃, tshwj tsis yog sau tseg)

Cim

Parameter

Cov xwm txheej

Min.

Ntaus.

Max.

Chav tsev

BVDSS

Dej-qhov chaw tawg Voltage VGS= 0 V, ibD= -250 ua

-40

---

---

V

△ BVDSS/△ TJ

BVDSS Kub Coefficient Siv rau 25 ℃, ID= -1 mA

---

-0.01 Nws

---

V / ℃

RDS (ON)

Static Drain-Source On-Resistance2 VGS=-10V, ID= -8.0A

---

26

34

VGS= -4.5V, ID= -6.0A

---

31

42

VGS(th)

Gate Threshold Voltage VGS=VDS, kuvD= -250 ua

-1.0

-1.5

-3.0

V

△ VGS (th)

VGS (th)Kub Coefficient

---

3.13

---

mV/℃

IDSS

Drain-Source Leakage Current VDS= -40V, VGS= 0V, tJ= 25 ℃

---

---

-1

uA

VDS= -40V, VGS= 0V, tJ= 55 ℃

---

---

-5

IGSS

Rooj vag-Source Leakage Current VGS= ± 20V, VDS= 0 V

---

---

± 100

nA

Qg

Tag nrho cov rooj vag Charge (-4.5V) VDS= -20V, VGS=-10V, ID= -1.5A

---

27

---

nC

Qgs

Gate-Source Charge

---

2.5

---

Qgd

Rooj vag-Drain Charge

---

6.7

---

Td (rau)

Tig-On ncua sij hawm VDD= -20V, VGS= -10V,RG= 3Ω, RL = 10Ω

---

9.8 ib

---

ns

Tr

Sawv Sijhawm

---

11

---

Td (tawm)

Tig-Off Ncua Sijhawm

---

54

---

Tf

Caij nplooj zeeg

---

7.1

---

Cyog

Input Capacitance VDS= -20V, VGS= 0V, f = 1MHz

---

1560

---

pF

Coss

Tso zis Capacitance

---

116

---

Crss

Rov qab Hloov Capacitance

---

97

---


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