WSD30L88DN56 Dual P-channel -30V -49A DFN5 * 6-8 WINSOK MOSFET

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Qauv nab npawb:WSD30L88DN56

BVDSS:30 V

RDSON:11.5m Ω

ID:-49 A

Channel:Dual P-channel

Pob:DFN5*6-8

Khoom Summery:Qhov voltage ntawm WSD30L88DN56 MOSFET yog -30V, tam sim no yog-49A, qhov tsis kam yog 11.5mΩ, channel yog Dual P-channel, thiab pob yog DFN5 * 6-8.

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Lub WSD30L88DN56 yog qhov ua tau zoo tshaj plaws trench Dual P-Ch MOSFET nrog cov xov tooj ntawm tes ceev heev, uas muab RDSON zoo heev thiab rooj vag them nqi rau feem ntau ntawm cov ntawv thov synchronous puck converter. Lub WSD30L88DN56 ua tau raws li RoHS thiab Green Product yuav tsum tau 100% EAS lav nrog tag nrho cov kev ntseeg tau pom zoo.

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Advanced high cell density Trench technology , Super Low Gate Charge , Zoo heev CdV / dt nyhuv poob , 100% EAS Guaranteed , Ntsuab Device muaj.

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High Frequency Point-of-Load Synchronous, Buck Converter rau MB/NB/UMPC/VGA, Networking DC-DC Fais Fab System, Load Switch, E-luam yeeb, wireless charging, motors, drones, kho mob, tsheb chargers, controllers, digital cov khoom, cov khoom siv hauv tsev me, cov khoom siv hluav taws xob.

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AOS

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Cim	Parameter	Kev ntsuas	Chav tsev
VDS	Dej-qhov chaw Voltage	-30	V
VGS	Rooj vag-Qhov Chaw Voltage	± 20	V
ID@TC = 25 ℃	Nruam Drain Tam Sim No, VGS @ -10V1	-49	A
ID@TC = 100 ℃	Nruam Drain Tam Sim No, VGS @ -10V1	-23	A
IDM	Pulsed Drain Current2	-120	A
EAS	Tib Pulse Avalanche Zog 3	68	mJ
PD@TC = 25 ℃	Total Power Dissipation 4	40	W
TSTG	Cia qhov kub thiab txias	-55 rau 150	℃
TJ	Kev khiav hauj lwm Junction Temperature Range	-55 rau 150	℃