WSD30300DN56G N-channel 30V 300A DFN5X6-8 WINSOK MOSFET

cov khoom

WSD30300DN56G N-channel 30V 300A DFN5X6-8 WINSOK MOSFET

piav qhia luv luv:

Tshooj Naj Npawb:WSD30300DN56G

BVDSS:30 V

ID:300 A

RDSON:0,7m wb 

Channel:N-channel

Pob:DFN5X6-8


Product Detail

Daim ntawv thov

Khoom cim npe

WINSOK MOSFET cov khoom saib xyuas

Qhov voltage ntawm WSD20100DN56 MOSFET yog 20V, tam sim no yog 90A, qhov tsis kam yog 1.6mΩ, channel yog N-channel, thiab pob yog DFN5X6-8.

WINSOK MOSFET daim ntawv thov thaj chaw

Electronic luam yeeb MOSFET, drones MOSFET, cov cuab yeej hluav taws xob MOSFET, fascia phom MOSFET, PD MOSFET, cov khoom siv hauv tsev me me MOSFET.

WINSOK MOSFET sib raug rau lwm cov khoom siv npe

AOS MOSFET AON6572.

POTENS Semiconductor MOSFET PDC394X.

MOSFET parameter

Cim

Parameter

Kev ntsuas

Chav tsev

VDS

Dej-qhov chaw Voltage

20

V

VGS

Rooj vag-Qhov Chaw Voltage

± 12

V

ID@TC= 25 ℃

Nruam Drain Current1

90

A

ID@TC= 100 ℃

Nruam Drain Current1

48

A

IDM

Pulsed Drain Current2

270

A

EAS

Tib Pulse Avalanche Zog3

80

mJ

IAS

Avalanche tam sim no

40

A

PD@TC= 25 ℃

Total Power Dissipation4

83

W

TSTG

Cia qhov kub thiab txias

-55 rau 150

TJ

Kev khiav hauj lwm Junction Temperature Range

-55 rau 150

RθJA

Thermal Resistance Junction-ambient1(t10S)

20

/W

RθJA

Thermal Resistance Junction-ambient1(Steady State)

55

/W

RθJC

Thermal Resistance Junction-case1

1.5

/W

 

Cim

Parameter

Cov xwm txheej

Min

Ntaus

Max

Chav tsev

BVDSS

Dej-qhov chaw tawg Voltage VGS=0V, ID=250uA

20

23

---

V

VGS(th)

Gate Threshold Voltage VGS = VDS, ID = 250uA

0.5

0.68 ib

1.0

V

RDS (ON)

Static Drain-Source On-Resistance2 VGS = 10V, ID = 20A

---

1.6

2.0

RDS (ON)

Static Drain-Source On-Resistance2 VGS = 4.5V, ID = 20A  

1.9

2.5

RDS (ON)

Static Drain-Source On-Resistance2 VGS = 2.5V, ID = 20A

---

2.8

3.8

IDSS

Drain-Source Leakage Current VDS=16V, VGS=0V, TJ=25

---

---

1

uA

VDS=16V, VGS=0V, TJ=125

---

---

5

IGSS

Rooj vag-Source Leakage Current VGS = ± 10V, VDS = 0V

---

---

± 10

uA

Rg

Qhov rooj tiv thaiv VDS=0V, VGS=0V, f=1MHz

---

1.2

---

Ω

Qg

Tag nrho lub rooj vag Charge (10V) VDS=15V, VGS=10V, ID=20A

---

77

---

nC

Qgs

Gate-Source Charge

---

8.7 ib

---

Qgd

Rooj vag-Drain Charge

---

14

---

Td (rau)

Tig-On ncua sij hawm VDD = 15V, VGS = 10V, RG = 3,

ID=20A

---

10.2

---

ns

Tr

Sawv Sijhawm

---

11.7 ib

---

Td (tawm)

Tig-Off Ncua Sijhawm

---

56.4 ib

---

Tf

Caij nplooj zeeg

---

16.2

---

Cis

Input Capacitance VDS=10V, VGS=0V, f=1MHz

---

ib 4307

---

pF

Coss

Tso zis Capacitance

---

501

---

Crss

Rov qab Hloov Capacitance

---

321

---

IS

Nruam Source Tam sim no1,5 ib VG=VD= 0V, Force Current

---

---

50

A

VSD

Diode Forward Voltage2 VGS=0V, IS=1A, TJ=25

---

---

1.2

V

ua tr

Rov qab lub sij hawm rov qab IF = 20A, di/dt=100A/µs,

TJ= 25

---

22

---

nS

Qrr

Rov qab them nyiaj rov qab

---

72

---

nC


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