WSD30300DN56G N-channel 30V 300A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET cov khoom saib xyuas
Qhov voltage ntawm WSD20100DN56 MOSFET yog 20V, tam sim no yog 90A, qhov tsis kam yog 1.6mΩ, channel yog N-channel, thiab pob yog DFN5X6-8.
WINSOK MOSFET daim ntawv thov thaj chaw
Electronic luam yeeb MOSFET, drones MOSFET, cov cuab yeej hluav taws xob MOSFET, fascia phom MOSFET, PD MOSFET, cov khoom siv hauv tsev me me MOSFET.
WINSOK MOSFET sib raug rau lwm cov khoom siv npe
AOS MOSFET AON6572.
POTENS Semiconductor MOSFET PDC394X.
MOSFET parameter
| Cim | Parameter | Kev ntsuas | Chav tsev |
| VDS | Dej-qhov chaw Voltage | 20 | V |
| VGS | Rooj vag-Qhov Chaw Voltage | ± 12 | V |
| ID@TC= 25 ℃ | Nruam Drain Tam Sim No1 | 90 | A |
| ID@TC= 100 ℃ | Nruam Drain Tam Sim No1 | 48 | A |
| IDM | Pulsed Drain Current2 | 270 | A |
| EAS | Tib Pulse Avalanche Zog3 | 80 | mJ |
| IAS | Avalanche tam sim no | 40 | A |
| PD@TC= 25 ℃ | Total Power Dissipation4 | 83 | W |
| TSTG | Cia qhov kub thiab txias | -55 rau 150 | ℃ |
| TJ | Kev khiav hauj lwm Junction Temperature Range | -55 rau 150 | ℃ |
| RθJA | Thermal Resistance Junction-ambient1(t≦10S) | 20 | ℃/W |
| RθJA | Thermal Resistance Junction-ambient1(Steady State) | 55 | ℃/W |
| RθJC | Thermal Resistance Junction-case1 | 1.5 | ℃/W |
| Cim | Parameter | Cov xwm txheej | Min | Ntaus | Max | Chav tsev |
| BVDSS | Dej-qhov chaw tawg Voltage | VGS=0V, ID=250uA | 20 | 23 | --- | V |
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 250uA | 0.5 | 0.68 ib | 1.0 | V |
| RDS (ON) | Static Drain-Source On-Resistance2 | VGS = 10V, ID = 20A | --- | 1.6 | 2.0 | mΩ |
| RDS (ON) | Static Drain-Source On-Resistance2 | VGS = 4.5V, ID = 20A | 1.9 | 2.5 | mΩ | |
| RDS (ON) | Static Drain-Source On-Resistance2 | VGS = 2.5V, ID = 20A | --- | 2.8 | 3.8 | mΩ |
| IDSS | Drain-Source Leakage Current | VDS=16V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=16V, VGS=0V, TJ=125℃ | --- | --- | 5 | |||
| IGSS | Rooj vag-Source Leakage Current | VGS = ± 10V, VDS = 0V | --- | --- | ± 10 | uA |
| Rg | Qhov rooj tiv thaiv | VDS=0V, VGS=0V, f=1MHz | --- | 1.2 | --- | Ω |
| Qg | Tag nrho lub rooj vag Charge (10V) | VDS=15V, VGS=10V, ID=20A | --- | 77 | --- | nC |
| Qgs | Gate-Source Charge | --- | 8.7 ib | --- | ||
| Qgd | Rooj vag-Drain Charge | --- | 14 | --- | ||
| Td (rau) | Tig-On ncua sij hawm | VDD = 15V, VGS = 10V, RG = 3, ID=20A | --- | 10.2 | --- | ns |
| Tr | Sawv Sijhawm | --- | 11.7 ib | --- | ||
| Td (tawm) | Tig-Off Ncua Sijhawm | --- | 56.4 ib | --- | ||
| Tf | Caij nplooj zeeg | --- | 16.2 | --- | ||
| Cis | Input Capacitance | VDS=10V, VGS=0V, f=1MHz | --- | ib 4307 | --- | pF |
| Coss | Tso zis Capacitance | --- | 501 | --- | ||
| Crss | Rov qab Hloov Capacitance | --- | 321 | --- | ||
| IS | Nruam Source Tam sim no1,5 ib | VG=VD= 0V, Force Current | --- | --- | 50 | A |
| VSD | Diode Forward Voltage2 | VGS=0V, IS=1A, TJ=25℃ | --- | --- | 1.2 | V |
| ua tr | Rov qab lub sij hawm rov qab | IF = 20A, di/dt=100A/µs, TJ= 25℃ | --- | 22 | --- | nS |
| Qrr | Rov qab them nyiaj rov qab | --- | 72 | --- | nC |
