WSD3023DN56 N-Ch thiab P-Channel 30V / -30V 14A / -12A DFN5 * 6-8 WINSOK MOSFET

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BVDSS:30V /-30V

RDSON:14mΩ / 23mΩ

ID:14A/-12A

Channel:N-Ch thiab P-Channel

Pob:DFN5*6-8

Khoom Summery:Qhov voltage ntawm WSD3023DN56 MOSFET yog 30V / -30V, tam sim no yog 14A / -12A, qhov tsis kam yog 14mΩ / 23mΩ, channel yog N-Ch thiab P-Channel, thiab pob yog DFN5 * 6-8.

Daim ntawv thov:Drones, motors, automotive electronics, khoom siv loj.

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WSD3023DN56 yog qhov ua tau zoo tshaj plaws trench N-ch thiab P-ch MOSFETs nrog cov xov tooj ntawm tes ceev heev, uas muab RDSON zoo heev thiab rooj vag them nqi rau feem ntau ntawm cov ntawv thov kev sib tw synchronous buck converter. WSD3023DN56 ua tau raws li RoHS thiab Green Product yuav tsum tau 100% EAS lav nrog tag nrho cov kev ntseeg tau pom zoo.

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Advanced high cell density Trench technology, Super Low Gate Charge, Zoo heev CdV / dt nyhuv poob, 100% EAS Guaranteed, Ntsuab Device muaj.

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High Frequency Point-of-Load Synchronous Buck Converter rau MB / NB / UMPC / VGA, Networking DC-DC Fais Fab System, CCFL Back-light Inverter, Drones, motors, automotive electronics, khoom siv loj.

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PIB 5606

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Cim	Parameter	Kev ntsuas		Chav tsev
Cim	Parameter	N-Ch	P-Ch	Chav tsev
VDS	Dej-qhov chaw Voltage	30	-30	V
VGS	Rooj vag-Qhov Chaw Voltage	± 20	± 20	V
ID	Nruam Drain Current, VGS(NP) = 10V, Ta = 25 ℃	14*	-12	A
ID	Nruam Drain Tam Sim No, VGS(NP) = 10V, Ta = 70 ℃	7.6	-9.7	A
IDP ib	Pulse Drain Current Tested, VGS(NP) = 10V	48	-48	A
EAS c	Avalanche Zog, Tib mem tes, L = 0.5mH	20	20	mJ
IAS c	Avalanche tam sim no, Tib mem tes, L = 0.5mH	9	-9	A
PD	Tag Nrho Cov Hluav Taws Xob Dissipation, Ta = 25 ℃	5.25	5.25	W
TSTG	Cia qhov kub thiab txias	-55-175 Ib	-55-175 Ib	℃
TJ	Kev khiav hauj lwm Junction Temperature Range	175	175	℃
RqJA b	Thermal Resistance-Kev sib tshuam rau Ambient, Steady State	60	60	℃ / W
RqJC	Thermal Resistance-Kev sib tshuam rau Case, Steady State	6.25 ib	6.25 ib	℃ / W

Cim	Parameter	Cov xwm txheej	Min.	Ntaus.	Max.	Chav tsev
BVDSS	Dej-qhov chaw tawg Voltage	VGS=0V, ID=250uA	30	---	---	V
RDS(ON) d	Static Drain-Source On-Resistance	VGS=10V, ID=8A	---	14	18.5 Nws	mΩ
RDS(ON) d	Static Drain-Source On-Resistance	VGS = 4.5V, ID = 5A	---	17	25	mΩ
VGS(th)	Gate Threshold Voltage	VGS = VDS, ID = 250uA	1.3	1.8	2.3	V
IDSS	Drain-Source Leakage Current	VDS = 20V, VGS = 0V, TJ = 25 ℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS = 20V, VGS = 0V, TJ = 85 ℃	---	---	30	uA
IGSS	Rooj vag-Source Leakage Current	VGS = ± 20V, VDS = 0V	---	---	± 100	nA
Rg	Qhov rooj tiv thaiv	VDS=0V, VGS=0V, f=1MHz	---	1.7	3.4	Ω
Qge	Total Gate Charge	VDS=15V, VGS=4.5V, IDS=8A	---	5.2	---	nC
Qgse	Gate-Source Charge		---	1.0	---
Qgde	Rooj vag-Drain Charge		---	2.8	---
Td(on) e	Tig-On ncua sij hawm	VDD=15V, RL=15R, IDS=1A,VGEN=10V, RG=6R.	---	6	---	ns
Tre	Sawv Sijhawm		---	8.6	---
Td(off)e	Tig-Off Ncua Sijhawm		---	16	---
Tfe	Caij nplooj zeeg		---	3.6	---
Cisse	Input Capacitance	VDS=15V, VGS=0V, f=1MHz	---	545 ib	---	pF
Cosse	Tso zis Capacitance		---	95	---
Crsse	Rov qab Hloov Capacitance		---	55	---