WSD30160DN56 N-channel 30V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET cov khoom saib xyuas
Qhov voltage ntawm WSD30160DN56 MOSFET yog 30V, tam sim no yog 120A, qhov tsis kam yog 1.9mΩ, channel yog N-channel, thiab pob yog DFN5X6-8.
WINSOK MOSFET daim ntawv thov thaj chaw
E-luam yeeb MOSFET, wireless charging MOSFET, drones MOSFET, kho mob MOSFET, tsheb chargers MOSFET, controllers MOSFET, cov khoom siv MOSFET, cov khoom siv hauv tsev me me MOSFET, cov khoom siv hluav taws xob MOSFET.
WINSOK MOSFET sib raug rau lwm cov khoom siv npe
AOS MOSFET AON6382,AON6384,AON644A,AON6548.
Onsemi, FAIRCHILD MOSFET NTMFS4834N, NTMFS4C5N.
TOSHIBA MOSFET TPH2R93PL.
PANJIT MOSFET PJQ5426.
NIKO-SEM MOSFET PKE1BB.
POTENS Semiconductor MOSFET PDC392X.
MOSFET parameter
| Cim | Parameter | Kev ntsuas | Chav tsev |
| VDS | Dej-qhov chaw Voltage | 30 | V |
| VGS | Gate-Saurua Voltage | ±20 | V |
| ID@TC= 25℃ | Nruam Drain Current, VGS@10 V1,7 ib | 120 | A |
| ID@TC= 100℃ | Nruam Drain Current, VGS@10 V1,7 ib | 68 | A |
| IDM | Pulsed Drain Current2 | 300 | A |
| EAS | Tib Pulse Avalanche Zog3 | 128 | mJ |
| IAS | Avalanche tam sim no | 50 | A |
| PD@TC= 25℃ | Total Power Dissipation4 | 62.5 ib | W |
| TSTG | Cia qhov kub thiab txias | -55 rau 150 | ℃ |
| TJ | Kev khiav hauj lwm Junction Temperature Range | -55 rau 150 | ℃ |
| Cim | Parameter | Cov xwm txheej | Min. | Ntaus. | Max. | Chav tsev |
| BVDSS | Dej-qhov chaw tawg Voltage | VGS= 0 V, ibD= 250 UA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKub Coefficient | Reference rau 25℃, kuvD= 1 mA | --- | 0.02 ib | --- | V/℃ |
| RDS (ON) | Static Drain-Source On-Resistance2 | VGS= 10V, ID= 20 A | --- | 1.9 | 2.5 | mΩ |
| VGS= 4.5V, ibD= 15 A | --- | 2.9 | 3.5 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, kuvD= 250 UA | 1.2 | 1.7 | 2.5 | V |
| △VGS (th) | VGS (th)Kub Coefficient | --- | -6.1 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS= 24V, VGS= 0V, tJ= 25℃ | --- | --- | 1 | uA |
| VDS= 24V, VGS= 0V, tJ= 55℃ | --- | --- | 5 | |||
| IGSS | Rooj vag-Source Leakage Current | VGS=±20 V, ibDS= 0 V | --- | --- | ±100 | nA |
| gfs ua | Forward Transconductance | VDS= 5 V, ibD= 10 A | --- | 32 | --- | S |
| Rg | Qhov rooj tiv thaiv | VDS= 0V, VGS= 0V, f = 1MHz | --- | 0.8 ua | 1.5 | Ω |
| Qg | Tag nrho lub rooj vag Charge (4.5V) | VDS= 15V, VGS= 4.5V, ibD= 20 A | --- | 38 | --- | nC |
| Qgs | Gate-Source Charge | --- | 10 | --- | ||
| Qgd | Rooj vag-Drain Charge | --- | 13 | --- | ||
| Td (rau) | Tig-On ncua sij hawm | VDD= 15V, VGEN= 10V, RG=6Ω, kuvD= 1A, RL = 15Ω. | --- | 25 | --- | ns |
| Tr | Sawv Sijhawm | --- | 23 | --- | ||
| Td (tawm) | Tig-Off Ncua Sijhawm | --- | 95 | --- | ||
| Tf | Caij nplooj zeeg | --- | 40 | --- | ||
| Cyog | Input Capacitance | VDS= 15V, VGS= 0V, f = 1MHz | --- | 4900 ib | --- | pF |
| Coss | Tso zis Capacitance | --- | 1180 | --- | ||
| Crss | Rov qab Hloov Capacitance | --- | 530 | --- |
