WSD30140DN56 N-channel 30V 85A DFN5 * 6-8 WINSOK MOSFET

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Qauv nab npawb:WSD30140DN56

BVDSS:30 V

RDSON:1,7m wb

ID:85a ib

Channel:N-channel

Pob:DFN5*6-8

Khoom Summery:Qhov voltage ntawm WSD30140DN56 MOSFET yog 30V, tam sim no yog 85A, qhov tsis kam yog 1.7mΩ, channel N-channel, thiab pob yog DFN5 * 6-8.

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Product Detail

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Lub WSD30140DN56 yog qhov ua tau zoo tshaj plaws trench N-channel MOSFET nrog cov xov tooj ntawm tes siab heev muab RDSON zoo heev thiab rooj vag nqi rau feem ntau synchronous puck converter daim ntaub ntawv.WSD30140DN56 ua raws li RoHS thiab cov khoom lag luam ntsuab, 100% EAS lav, tag nrho cov kev ntseeg tau pom zoo.

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Advanced high cell density Trench technology, ultra-low gate charge, zoo heev CdV/dt nyhuv attenuation, 100% EAS lav, ntsuab li muaj

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High-frequency point-of-load synchronization, puck converters, networked DC-DC fais fab tshuab, siv cov cuab yeej hluav taws xob, hluav taws xob luam yeeb, wireless charging, drones, kev kho mob, tsheb them, controllers, cov khoom lag luam, cov khoom siv me me, cov khoom siv hluav taws xob.

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AO AON6312, AON6358, AON6360, AON6734, AON6792, AONS36314.NTMFS4847 N.VISHAY SiRA 62 DP.ST STL86N3LLH6AG.INFINEON BSC050N03 MSG.TI CSD17327Q5A, CSD17327Q5A, CSD17307Q5A.NXP PH2520U.TOSHIBA TPH4R803PL TPH3R203NL.ROHM RS1E281BN, RS1E280BN, RS1E280GN, RS1E301GN, RS1E321GN, RS1E350BN, RS1E350GN.PIB 5410.AP AP3D5R0MT.NIKO PK610SA, PK510BA.POTENS PDC 3803R

Cov tsis tseem ceeb

Cim	Parameter	Kev ntsuas	Chav tsev
VDS	Dej-qhov chaw Voltage	30	V
VGS	Rooj vag-Qhov Chaw Voltage	± 20	V
ID@TC = 25 ℃	Nruam Drain Tam Sim No, VGS @ 10V1,7	85	A
ID@TC = 70 ℃	Nruam Drain Tam Sim No, VGS @ 10V1,7	65	A
IDM	Pulsed Drain Current2	300	A
PD@TC = 25 ℃	Total Power Dissipation 4	50	W
TSTG	Cia qhov kub thiab txias	-55 rau 150	℃
TJ	Kev khiav hauj lwm Junction Temperature Range	-55 rau 150	℃

Cim	Parameter	Cov xwm txheej	Min.	Ntaus.	Max.	Chav tsev
BVDSS	Dej-qhov chaw tawg Voltage	VGS=0V, ID=250uA	30	---	---	V
△ BVDSS/△ TJ	BVDSS Kub Coefficient	Siv rau 25 ℃, ID = 1mA	---	0.02 ib	---	V / ℃
RDS (ON)	Static Drain-Source On-Resistance2	VGS = 10V, ID = 20A	---	1.7	2.4	mΩ
RDS (ON)	Static Drain-Source On-Resistance2	VGS = 4.5V, ID = 15A		2.5	3.3	mΩ
VGS(th)	Gate Threshold Voltage	VGS = VDS, ID = 250uA	1.2	1.7	2.5	V
	Drain-Source Leakage Current	VDS = 24V, VGS = 0V, TJ = 25 ℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS = 24V, VGS = 0V, TJ = 55 ℃	---	---	5	uA
IGSS	Rooj vag-Source Leakage Current	VGS = ± 20V, VDS = 0V	---	---	± 100	nA
gfs ua	Forward Transconductance	VDS = 5V, ID = 20A	---	90	---	S
Qg	Tag nrho lub rooj vag Charge (4.5V)	VDS=15V, VGS=4.5V, ID=20A	---	26	---	nC
Qgs	Gate-Source Charge		---	9.5 ib	---
Qgd	Rooj vag-Drain Charge		---	11.4	---
Td (rau)	Tig-On ncua sij hawm	VDD = 15V, VGEN = 10V, RG = 3Ω, RL = 0.75Ω.	---	11	---	ns
Tr	Sawv Sijhawm		---	6	---
Td (tawm)	Tig-Off Ncua Sijhawm		---	38.5 ib	---
Tf	Caij nplooj zeeg		---	10	---
Cis	Input Capacitance	VDS=15V, VGS=0V, f=1MHz	---	3000	---	pF
Coss	Tso zis Capacitance		---	1280	---
Crss	Rov qab Hloov Capacitance		---	160	---