WSD25280DN56G N-channel 25V 280A DFN5X6-8 WINSOK MOSFET

cov khoom

WSD25280DN56G N-channel 25V 280A DFN5X6-8 WINSOK MOSFET

piav qhia luv luv:

Tshooj Naj Npawb:WSD25280DN56G

BVDSS:25 v

ID:280a ua

RDSON:0,7m wb 

Channel:N-channel

Pob:DFN5X6-8


Product Detail

Daim ntawv thov

Khoom cim npe

WINSOK MOSFET cov khoom saib xyuas

Qhov voltage ntawm WSD25280DN56G MOSFET yog 25V, tam sim no yog 280A, qhov tsis kam yog 0.7mΩ, channel yog N-channel, thiab pob yog DFN5X6-8.

WINSOK MOSFET daim ntawv thov thaj chaw

High Frequency Point-of-Load Synchronous,Buck Converter,Networking DC-DC Fais Fab System,Daim Ntawv Thov Fais Fab, E-luam yeeb MOSFET, wireless charging MOSFET, drones MOSFET, kho mob MOSFET, tsheb chargers MOSFET, controllers MOSFET, cov khoom siv MOSFET, cov khoom siv hauv tsev me me MOSFET, cov khoom siv hluav taws xob MOSFET.

WINSOK MOSFET sib raug rau lwm cov khoom siv npe

Nxperian MOSFET PSMN1R-4ULD

POTENS Semiconductor MOSFET PDC262X.

MOSFET parameter

Cim

Parameter

Kev ntsuas

Chav tsev

VDS

Dej-qhov chaw Voltage

25

V

VGS

Gate-Saurua Voltage

±20

V

ID@TC= 25

Nruam Drain Tam Sim No(Silicon Limited)1,7 ib

280

A

ID@TC= 70

Nruam Drain Tam Sim No (Silicon Limited)1,7 ib

190

A

IDM

Pulsed Drain Current2

600

A

EAS

Tib Pulse Avalanche Zog3

1200

mJ

IAS

Avalanche tam sim no

100

A

PD@TC= 25

Total Power Dissipation4

83

W

TSTG

Cia qhov kub thiab txias

-55 rau 150

TJ

Kev khiav hauj lwm Junction Temperature Range

-55 rau 150

 

Cim

Parameter

Cov xwm txheej

Min.

Ntaus.

Max.

Chav tsev

BVDSS

Dej-qhov chaw tawg Voltage VGS= 0 V, ibD= 250 UA

25

---

---

V

BVDSS/△TJ

BVDSSKub Coefficient Reference rau 25, kuvD= 1 mA

---

0.022 ib

---

V/

RDS (ON)

Static Drain-Source On-Resistance2 VGS= 10V, ID= 20 A

---

0.7 ua

0.9 mΩ
VGS= 4.5V, ibD= 20 A

---

1.4

1.9

VGS(th)

Gate Threshold Voltage VGS=VDS, kuvD= 250 UA

1.0

---

2.5

V

VGS (th)

VGS (th)Kub Coefficient

---

-6.1

---

mV/

IDSS

Drain-Source Leakage Current VDS= 20V, VGS= 0V, tJ= 25

---

---

1

uA

VDS= 20V, VGS= 0V, tJ= 55

---

---

5

IGSS

Rooj vag-Source Leakage Current VGS=±20 V, ibDS= 0 V

---

---

±100

nA

gfs ua

Forward Transconductance VDS= 5 V, ibD= 10 A

---

40

---

S

Rg

Qhov rooj tiv thaiv VDS= 0V, VGS= 0V, f = 1MHz

---

3.8

1.5

Ω

Qg

Tag nrho lub rooj vag Charge (4.5V) VDS= 15V, VGS= 4.5V, ibD= 20 A

---

72

---

nC

Qgs

Gate-Source Charge

---

18

---

Qgd

Rooj vag-Drain Charge

---

24

---

Td (rau)

Tig-On ncua sij hawm VDD= 15V, VGEN= 10V, RG=1Ω, kuvD= 10 A

---

33

---

ns

Tr

Sawv Sijhawm

---

55

---

Td (tawm)

Tig-Off Ncua Sijhawm

---

62

---

Tf

Caij nplooj zeeg

---

22

---

Cyog

Input Capacitance VDS= 15V, VGS= 0V, f = 1MHz

---

7752 ib

---

pF

Coss

Tso zis Capacitance

---

1120

---

Crss

Rov qab Hloov Capacitance

---

650

---

 

 


  • Yav dhau los:
  • Tom ntej:

  • Sau koj cov lus ntawm no thiab xa tuaj rau peb