WSD25280DN56G N-channel 25V 280A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET cov khoom saib xyuas
Qhov voltage ntawm WSD25280DN56G MOSFET yog 25V, tam sim no yog 280A, qhov tsis kam yog 0.7mΩ, channel yog N-channel, thiab pob yog DFN5X6-8.
WINSOK MOSFET daim ntawv thov thaj chaw
High Frequency Point-of-Load Synchronous,Buck Converter,Networking DC-DC Fais Fab System,Kev Siv Hluav Taws Xob, E-luam yeeb MOSFET, wireless charging MOSFET, drones MOSFET, kev kho mob MOSFET, tsheb chargers MOSFET, controllers MOSFET, cov khoom siv MOSFET, cov khoom siv hauv tsev me me MOSFET, cov khoom siv hluav taws xob MOSFET.
WINSOK MOSFET sib raug rau lwm cov khoom siv npe
Nxperian MOSFET PSMN1R-4ULD
POTENS Semiconductor MOSFET PDC262X.
MOSFET parameter
| Cim | Parameter | Kev ntsuas | Chav tsev |
| VDS | Dej-qhov chaw Voltage | 25 | V |
| VGS | Gate-Saurua Voltage | ±20 | V |
| ID@TC= 25℃ | Nruam Drain Current(Silicon Limited)1,7 ib | 280 | A |
| ID@TC= 70℃ | Nruam Drain Tam Sim No (Silicon Limited)1,7 ib | 190 | A |
| IDM | Pulsed Drain Current2 | 600 | A |
| EAS | Tib Pulse Avalanche Zog3 | 1200 | mJ |
| IAS | Avalanche tam sim no | 100 | A |
| PD@TC= 25℃ | Total Power Dissipation4 | 83 | W |
| TSTG | Cia qhov kub thiab txias | -55 rau 150 | ℃ |
| TJ | Kev khiav hauj lwm Junction Temperature Range | -55 rau 150 | ℃ |
| Cim | Parameter | Cov xwm txheej | Min. | Ntaus. | Max. | Chav tsev |
| BVDSS | Dej-qhov chaw tawg Voltage | VGS= 0 V, ibD= 250 ua | 25 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKub Coefficient | Reference rau 25℃, kuvD= 1 mA | --- | 0.022 ib | --- | V/℃ |
| RDS (ON) | Static Drain-Source On-Resistance2 | VGS= 10V, ID= 20 A | --- | 0.7 | 0.9 | mΩ |
| VGS= 4.5V, ibD= 20 A | --- | 1.4 | 1.9 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, kuvD= 250 ua | 1.0 | --- | 2.5 | V |
| △VGS (th) | VGS (th)Kub Coefficient | --- | -6.1 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS= 20V, VGS= 0V, tJ= 25℃ | --- | --- | 1 | uA |
| VDS= 20V, VGS= 0V, tJ= 55℃ | --- | --- | 5 | |||
| IGSS | Rooj vag-Source Leakage Current | VGS=±20 V, ibDS= 0 V | --- | --- | ±100 | nA |
| gfs ua | Forward Transconductance | VDS= 5 V, ibD= 10 A | --- | 40 | --- | S |
| Rg | Qhov rooj tiv thaiv | VDS= 0V, VGS= 0V, f = 1MHz | --- | 3.8 | 1.5 | Ω |
| Qg | Tag nrho lub rooj vag Charge (4.5V) | VDS= 15V, VGS= 4.5V, ibD= 20 A | --- | 72 | --- | nC |
| Qgs | Gate-Source Charge | --- | 18 | --- | ||
| Qgd | Rooj vag-Drain Charge | --- | 24 | --- | ||
| Td (rau) | Tig-On ncua sij hawm | VDD= 15V, VGEN= 10V, RG=1Ω, kuvD= 10 A | --- | 33 | --- | ns |
| Tr | Sawv Sijhawm | --- | 55 | --- | ||
| Td (tawm) | Tig-Off Ncua Sijhawm | --- | 62 | --- | ||
| Tf | Caij nplooj zeeg | --- | 22 | --- | ||
| Cyog | Input Capacitance | VDS= 15V, VGS= 0V, f = 1MHz | --- | 7752 ib | --- | pF |
| Coss | Tso zis Capacitance | --- | 1120 | --- | ||
| Crss | Rov qab Hloov Capacitance | --- | 650 | --- |
