WSD20L120DN56 P-channel -20V -120A DFN5 * 6-8 WINSOK MOSFET

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Qauv nab npawb:WSD20L120DN56

BVDSS:-20 V

RDSON:2.1m Ω

ID:-120 A

Channel:P-channel

Pob:DFN5*6-8

Khoom Summery:MOSFET WSD20L120DN56 ua haujlwm ntawm -20 volts thiab rub tawm tam sim no ntawm -120 amps.Nws muaj qhov tsis kam ntawm 2.1 milliohms, P-channel, thiab los hauv pob DFN5 * 6-8.

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WSD20L120DN56 yog qhov ua tau zoo tshaj plaws P-Ch MOSFET nrog cov qauv ntawm tes muaj zog, muab RDSON zoo heev thiab lub rooj vag nqi rau feem ntau synchronous puck converter siv.WSD20L120DN56 ua tau raws li 100% EAS cov cai rau RoHS thiab cov khoom lag luam zoo ib puag ncig, nrog kev pom zoo ua tiav kev ntseeg siab.

Nta

1, Advanced high cell density Trench technology
2, Super Low Gate Charge
3, Zoo heev CdV / dt nyhuv poob
4, 100% EAS Guaranteed 5, Green Device muaj

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AOS AON6411,NIKO PK5A7BA

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Cim	Parameter	Kev ntsuas		Chav tsev
Cim	Parameter	10s ib	Lub Xeev	Chav tsev
VDS	Dej-qhov chaw Voltage	-20		V
VGS	Rooj vag-Qhov Chaw Voltage	± 10		V
ID@TC = 25 ℃	Nruam Drain Tam Sim No, VGS @ -10V1	-120		A
ID@TC = 100 ℃	Nruam Drain Tam Sim No, VGS @ -10V1	-69.5		A
ID@TA = 25 ℃	Nruam Drain Tam Sim No, VGS @ -10V1	-25	-22	A
ID@TA = 70 ℃	Nruam Drain Tam Sim No, VGS @ -10V1	-24	-18	A
IDM	Pulsed Drain Current2	-340		A
EAS	Tib Pulse Avalanche Zog 3	300		mJ
IAS	Avalanche tam sim no	-36		A
PD@TC = 25 ℃	Total Power Dissipation 4	130		W
PD@TA = 25 ℃	Total Power Dissipation 4	6.8	6.25 ib	W
TSTG	Cia qhov kub thiab txias	-55 rau 150		℃
TJ	Kev khiav hauj lwm Junction Temperature Range	-55 rau 150		℃

Cim	Parameter	Cov xwm txheej	Min.	Ntaus.	Max.	Chav tsev
BVDSS	Dej-qhov chaw tawg Voltage	VGS=0V, ID=-250uA	-20	---	---	V
△ BVDSS/△ TJ	BVDSS Kub Coefficient	Siv rau 25 ℃, ID = -1mA	---	-0.0212	---	V / ℃
RDS (ON)	Static Drain-Source On-Resistance2	VGS=-4.5V, ID=-20A	---	2.1	2.7	mΩ
RDS (ON)	Static Drain-Source On-Resistance2					mΩ
		VGS = -2.5V, ID = -20A	---	2.8	3.7
VGS(th)	Gate Threshold Voltage	VGS=VDS, ID =-250uA	-0.4	-0.6	-1.0	V
		VGS=VDS, ID =-250uA
△ VGS(th)	VGS(th) Temperature Coefficient		---	4.8	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=-20V, VGS=0V, TJ=25 ℃	---	---	-1	uA
IDSS	Drain-Source Leakage Current					uA
		VDS=-20V, VGS=0V, TJ=55 ℃	---	---	-6
IGSS	Rooj vag-Source Leakage Current	VGS = ± 20V, VDS = 0V	---	---	± 100	nA
gfs ua	Forward Transconductance	VDS=-5V, ID=-20A	---	100	---	S
Rg	Qhov rooj tiv thaiv	VDS=0V, VGS=0V, f=1MHz	---	2	5	Ω
Qg	Tag nrho lub rooj vag Charge (-4.5V)	VDS=-10V, VGS=-4.5V, ID=-20A	---	100	---	nC
Qgs	Gate-Source Charge		---	21	---
Qgd	Rooj vag-Drain Charge		---	32	---
Td (rau)	Tig-On ncua sij hawm	VDD = -10V, VGEN = -4.5V, RG = 3Ω ID = -1A, RL = 0.5Ω	---	20	---	ns
Tr	Sawv Sijhawm		---	50	---
Td (tawm)	Tig-Off Ncua Sijhawm		---	100	---
Tf	Caij nplooj zeeg		---	40	---
Cis	Input Capacitance	VDS=-10V, VGS=0V, f=1MHz	---	ib 4950	---	pF
Coss	Tso zis Capacitance		---	380	---
Crss	Rov qab Hloov Capacitance		---	290	---