WSD2090DN56 N-channel 20V 80A DFN5 * 6-8 WINSOK MOSFET

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BVDSS:20 V ua

RDSON:2,8m 0

ID:80 A

Channel:N-channel

Pob:DFN5*6-8

Khoom Summery:Qhov voltage ntawm WSD2090DN56 MOSFET yog 20V, tam sim no yog 80A, qhov tsis kam yog 2.8mΩ, channel yog N-channel, thiab pob yog DFN5 * 6-8.

Daim ntawv thov:Electronic luam yeeb, drones, cov cuab yeej hluav taws xob, fascia phom, PD, khoom siv hauv tsev me, thiab lwm yam.

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WSD2090DN56 yog qhov ua tau zoo tshaj plaws trench N-Ch MOSFET nrog cov xov tooj ntawm tes siab heev, uas muab RDSON zoo heev thiab rooj vag them nqi rau feem ntau ntawm cov ntawv siv synchronous puck converter. WSD2090DN56 ua tau raws li RoHS thiab Green Product yuav tsum tau 100% EAS lav nrog tag nrho cov kev ntseeg tau pom zoo.

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Advanced high cell density Trench technology, Super Low Gate Charge, Zoo heev CdV / dt nyhuv poob, 100% EAS Guaranteed, Green Device Muaj

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Hloov, Lub Zog Hluav Taws Xob, Load Switch, luam yeeb hluav taws xob, drones, cov cuab yeej hluav taws xob, fascia phom, PD, cov khoom siv hauv tsev me, thiab lwm yam.

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AOS 6572

Cov tsis tseem ceeb

Kev ntsuas siab siab siab (TC = 25 ℃ tshwj tsis yog sau tseg)

Cim	Parameter	Max.	Chav tsev
VDSS	Dej-qhov chaw Voltage	20	V
VGSS	Rooj vag-Qhov Chaw Voltage	± 12	V
ID@TC = 25 ℃	Nruam Drain Tam Sim No, VGS @ 10V1	80	A
ID@TC = 100 ℃	Nruam Drain Tam Sim No, VGS @ 10V1	59	A
IDM	Pulsed Drain Current Note1	360	A
EAS	Tib Pulsed Avalanche Zog Note2	110	mJ
PD	Lub zog Dissipation	81	W
RJA	Thermal Resistance, Hla mus rau Case	65	℃ / W
RθJC	Thermal Resistance Junction-Case 1	4	℃ / W
TJ, TSTG	Kev khiav hauj lwm thiab cia kub ntau yam	-55 rau +175	℃

Cov yam ntxwv hluav taws xob (TJ = 25 ℃, tshwj tsis yog sau tseg)

Cim	Parameter	Cov xwm txheej	Min	Ntaus	Max	Chav tsev
BVDSS	Dej-qhov chaw tawg Voltage	VGS = 0V, ID = 250μA	20	24	---	V
△ BVDSS/△ TJ	BVDSS Kub Coefficient	Siv rau 25 ℃, ID = 1mA	---	0.018 ib	---	V / ℃
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250μA	0.50 ib	0.65 ib	1.0	V
RDS (ON)	Static Drain-Source On-Resistance	VGS = 4.5V, ID = 30A	---	2.8	4.0	mΩ
RDS (ON)	Static Drain-Source On-Resistance	VGS = 2.5V, ID = 20A	---	4.0	6.0	mΩ
IDSS	Zero Gate Voltage Drain Current	VDS = 20V, VGS = 0V	---	---	1	μA
IGSS	Rooj vag-Lub cev Leakage tam sim no	VGS = ± 10V, VDS = 0V	---	---	± 100	nA
Cis	Input Capacitance	VDS=10V,VGS=0V,f=1MHZ	---	3200	---	pF
Coss	Tso zis Capacitance		---	460	---
Crss	Rov qab Hloov Capacitance		---	446 ib	---
Qg	Total Gate Charge	VGS = 4.5V, VDS = 10V, ID = 30A	---	11.05 Nws	---	nC
Qgs	Gate-Source Charge		---	1.73 ib	---
Qgd	Rooj vag-Drain Charge		---	3.1	---
tD(on)	Tig-on ncua sij hawm	VGS = 4.5V, VDS = 10V, ID = 30ARGEN = 1.8Ω	---	9.7 ib	---	ns
tr	Tig-on Rise Time		---	37	---
tD (tawm)	Teem sijhawm ncua sijhawm		---	63	---
tf	Teem sijhawm caij nplooj zeeg		---	52	---
VSD	Diode Forward Voltage	IS = 7.6A, VGS = 0V	---	---	1.2	V