WSD100N06GDN56 N-channel 60V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET cov khoom saib xyuas
Qhov voltage ntawm WSD100N06GDN56 MOSFET yog 60V, tam sim no yog 100A, qhov tsis kam yog 3mΩ, channel N-channel, thiab pob yog DFN5X6-8.
WINSOK MOSFET daim ntawv thov thaj chaw
Cov khoom siv hluav taws xob kho mob MOSFET, PDs MOSFET, drones MOSFET, hluav taws xob luam yeeb MOSFET, cov khoom siv loj MOSFET, thiab cov cuab yeej hluav taws xob MOSFET.
WINSOK MOSFET sib raug rau lwm cov khoom siv npe
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor92 MOSFX.
MOSFET parameter
| Cim | Parameter | Kev ntsuas | Chav tsev | ||
| VDS | Dej-qhov chaw Voltage | 60 | V | ||
| VGS | Rooj vag-Qhov Chaw Voltage | ± 20 | V | ||
| ID1,6 | Nruam Drain Tam Sim No | TC = 25°C | 100 | A | |
| TC = 100 ° C | 65 | ||||
| IDM2 | Pulsed Drain Current | TC = 25°C | 240 | A | |
| PD | Lub zog siab tshaj plaws Dissipation | TC = 25°C | 83 | W | |
| TC = 100 ° C | 50 | ||||
| IAS | Avalanche Tam sim no, Tib mem tes | 45 | A | ||
| EAS3 | Tib Pulse Avalanche Zog | 101 | mJ | ||
| TJ | Qhov siab tshaj qhov kub thiab txias | 150 | ℃ | ||
| TSTG | Cia qhov kub thiab txias | -55 rau 150 | ℃ | ||
| RθJA1 | Thermal Resistance Junction rau ambient | Lub Xeev | 55 | ℃/W | |
| RθJC1 | Thermal Resistance-Kev sib tshuam rau Case | Lub Xeev | 1.5 | ℃/W | |
| Cim | Parameter | Cov xwm txheej | Min. | Ntaus. | Max. | Chav tsev | |
| Static | |||||||
| V(BR)DSS | Dej-qhov chaw tawg Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Zero Gate Voltage Drain Current | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ= 85°C | 30 | ||||||
| IGSS | Gate Leakage Current | VGS = ± 20V, VDS = 0V | ± 100 | nA | |||
| Ntawm Yam ntxwv | |||||||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1.2 | 1.8 | 2.5 | V | |
| RDS (rau)2 | Drain-Source On-state Resistance | VGS = 10V, ID = 20A | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| Hloov | |||||||
| Qg | Total Gate Charge | VDS = 30 V VGS = 10 V ID=20A | 58 | nC | |||
| Qgs | Rooj vag-Sour Charge | 16 | nC | ||||
| Qgd | Rooj vag-Drain Charge | 4.0 | nC | ||||
| td (rau) | Tig-on ncua sij hawm | VGEN = 10 V VDD = 30 V ID=20A RG = Ω | 18 | ns | |||
| tr | Tig-on Rise Time | 8 | ns | ||||
| td (tawm) | Teem sijhawm ncua sijhawm | 50 | ns | ||||
| tf | Tig-tawm lub caij nplooj zeeg | 11 | ns | ||||
| Rg | Gat tiv | VGS=0V, VDS=0V, f=1MHz | 0.7 ua | Ω | |||
| Dynamic | |||||||
| Cis | Hauv Capacitance | VGS = 0 V VDS = 30V f = 1MHz | ib 3458 | pF | |||
| Coss | Tawm Capacitance | 1522 ib | pF | ||||
| Crss | Rov qab Hloov Capacitance | 22 | pF | ||||
| Drain-Source Diode yam ntxwv thiab kev ntsuas siab tshaj plaws | |||||||
| IB 1,5 | Nruam Source Tam sim no | VG = VD = 0V, Force Current | 55 | A | |||
| ISM | Pulsed Source Current3 | 240 | A | ||||
| VSD2 | Diode Forward Voltage | ISD = 1A, VGS = 0V | 0.8 ua | 1.3 | V | ||
| ua tr | Rov qab lub sij hawm rov qab | ISD= 20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Rov qab them nyiaj rov qab | 33 | nC | ||||
