Cov hlau-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, lossis MOS FET) yog ib hom kev cuam tshuam ntawm thaj chaw cuam tshuam (FET), feem ntau yog tsim los ntawm kev tswj oxidation ntawm silicon. Nws muaj ib lub rooj vag insulated, qhov voltage uas txiav txim seb qhov conductivity ntawm lub cuab yeej.
Nws lub ntsiab feature yog hais tias muaj ib tug silicon dioxide insulating txheej ntawm lub rooj vag hlau thiab cov channel, yog li nws muaj ib tug siab input tsis kam (txog 1015Ω). Nws kuj tau muab faib ua N-channel raj thiab P-channel raj. Feem ntau cov substrate (substrate) thiab qhov S yog txuas ua ke.
Raws li cov qauv sib txawv, MOSFETs tau muab faib ua hom kev txhim kho thiab hom depletion.
Hom kev ua kom zoo dua qub txhais tau tias: thaum VGS = 0, lub raj yog nyob rau hauv lub xeev txiav. Tom qab ntxiv qhov tseeb VGS, feem ntau cov neeg nqa khoom tau nyiam rau ntawm lub rooj vag, yog li "txhim kho" cov neeg nqa khoom hauv cheeb tsam no thiab tsim cov channel conductive. .
Lub depletion hom txhais tau hais tias thaum VGS = 0, ib channel raug tsim. Thaum qhov tseeb VGS ntxiv, feem ntau cov cab kuj tuaj yeem ntws tawm ntawm cov channel, yog li "depleting" cov cab kuj thiab tig lub raj tawm.
Paub qhov txawv yog vim li cas: JFET lub input tsis kam yog ntau tshaj 100MΩ, thiab transconductance siab heev, thaum lub rooj vag yog coj, qhov chaw sab hauv tsev magnetic teb yog heev yooj yim mus ntes cov kev ua hauj lwm voltage cov ntaub ntawv teeb liab ntawm lub rooj vag, thiaj li hais tias cov raj xa mus rau mus txog, los yog yuav tsum tau on-off. Yog hais tias lub cev induction voltage yog tam sim ntawd ntxiv rau lub rooj vag, vim hais tias tus yuam sij electromagnetic cuam tshuam muaj zog, qhov teeb meem saum toj no yuav tseem ceeb dua. Yog hais tias tus 'meter' koob deflects sharply mus rau sab laug, nws txhais tau hais tias lub raj xa dej mus txog, qhov ntws-qhov chaw resistor RDS nthuav, thiab tus nqi ntawm qhov ntws-qhov tam sim no txo IDS. Hloov pauv, lub koob ntsuas ntsuas tau txav mus rau sab xis, qhia tias cov raj xa dej zoo li yuav raug kaw, RDS nqis mus, thiab IDS nce mus. Txawm li cas los xij, cov kev taw qhia meej uas lub ntsuas ntsuas tau deflected yuav tsum yog nyob ntawm qhov zoo thiab qhov tsis zoo ntawm cov induced voltage (zoo kev taw qhia ua hauj lwm voltage los yog thim rov qab kev taw qhia ua hauj lwm voltage) thiab lub midpoint ua hauj lwm ntawm lub pipeline.
WINSOK DFN3x3 MOSFET
Siv cov N channel ua piv txwv, nws yog tsim los ntawm P-hom silicon substrate nrog ob qhov chaw doped heev diffusion cheeb tsam N + thiab ntws diffusion cheeb tsam N +, thiab tom qab ntawd cov khoom siv hluav taws xob S thiab cov dej electrode D raug coj tawm raws. Lub hauv paus thiab substrate yog txuas nrog sab hauv, thiab lawv ib txwm tuav tib lub peev xwm. Thaum cov dej ntws txuas nrog rau qhov zoo ntawm lub tshuab hluav taws xob thiab qhov chaw txuas nrog qhov tsis zoo ntawm lub tshuab hluav taws xob thiab VGS = 0, cov channel tam sim no (ie ntws tam sim no) ID = 0. Raws li VGS maj mam nce, nyiam los ntawm qhov zoo ntawm lub qhov rooj voltage, cov neeg nqa khoom tsis zoo raug cuam tshuam los ntawm ob thaj chaw diffusion, tsim N-hom channel los ntawm ntws mus rau qhov chaw. Thaum VGS loj dua qhov tig-rau-voltage VTN ntawm lub raj (feem ntau txog +2V), N-channel raj pib ua, tsim tus ID ntws tam sim no.
VMOSFET (VMOSFET), nws lub npe puv yog V-groove MOSFET. Nws yog ib tug tshiab tsim high-efficiency, lub hwj chim switching ntaus ntawv tom qab MOSFET. Nws tsis tsuas yog tau txais lub siab input impedance ntawm MOSFET (≥108W), tab sis kuj yog qhov me me tsav tam sim no (txog 0.1μA). Nws kuj muaj cov yam ntxwv zoo xws li siab tiv taus hluav taws xob (txog 1200V), kev ua haujlwm loj tam sim no (1.5A ~ 100A), siab tso zis hluav taws xob (1 ~ 250W), zoo transconductance linearity, thiab ceev hloov ceev. Precisely vim hais tias nws combines qhov zoo ntawm lub tshuab nqus tsev raj thiab lub hwj chim transistors, nws yog dav siv nyob rau hauv voltage amplifiers (voltage amplification tuaj yeem ncav cuag ntau txhiab zaus), lub zog amplifiers, hloov cov khoom siv hluav taws xob thiab cov inverter.
Raws li peb txhua tus paub, lub rooj vag, qhov chaw thiab ntws ntawm ib txwm MOSFET yog kwv yees ntawm tib lub dav hlau kab rov tav ntawm lub nti, thiab nws cov kev khiav hauj lwm tam sim no pib ntws mus rau kab rov tav. VMOS raj yog txawv. Nws muaj ob lub ntsiab lus tseem ceeb: ua ntej, lub rooj vag hlau txais yuav V-shaped zawj qauv; thib ob, nws muaj ntsug conductivity. Txij li thaum cov dej ntws tawm los ntawm sab nraub qaum ntawm lub nti, tus ID tsis ntws rov qab raws lub nti, tab sis pib los ntawm qhov hnyav hnyav N + thaj tsam (qhov chaw S) thiab ntws mus rau hauv thaj av maj mam doped N-drift los ntawm P channel. Thaum kawg, nws nce mus txog vertically downward kom ntws D. Vim hais tias qhov ntws hla ntu ntu nce, cov dej ntws loj tuaj yeem dhau mus. Txij li thaum muaj cov silicon dioxide insulating txheej ntawm lub rooj vag thiab nti, nws tseem yog ib lub rooj vag insulated MOSFET.
Qhov zoo ntawm kev siv:
MOSFET yog ib qho hluav taws xob tswj hluav taws xob, thaum lub tshuab hluav taws xob yog cov khoom tswj tam sim no.
MOSFETs yuav tsum tau siv thaum tsuas yog ib qho me me ntawm tam sim no raug tso cai los ntawm lub teeb liab qhov chaw; transistors yuav tsum tau siv thaum lub teeb liab voltage tsawg thiab ntau tam sim no raug tso cai los ntawm lub teeb liab qhov chaw. MOSFET siv cov neeg nqa khoom feem ntau los ua hluav taws xob, yog li nws yog hu ua unipolar ntaus ntawv, thaum transistors siv cov neeg nqa khoom feem ntau thiab cov neeg nqa khoom tsawg los ua hluav taws xob, yog li nws hu ua cov khoom siv bipolar.
Lub hauv paus thiab ntws ntawm qee qhov MOSFETs tuaj yeem siv sib hloov, thiab lub rooj vag hluav taws xob tuaj yeem ua qhov zoo lossis tsis zoo, ua rau lawv hloov pauv ntau dua li triodes.
MOSFET tuaj yeem ua haujlwm raws li qhov tam sim no me me thiab tsis tshua muaj hluav taws xob, thiab nws cov txheej txheem tsim khoom tuaj yeem yooj yim ua ke ntau MOSFETs ntawm silicon nti. Yog li ntawd, MOSFET tau dav siv nyob rau hauv loj-scale integrated circuits.
Olueky SOT-23N MOSFET
Cov yam ntxwv ntawm daim ntawv thov ntawm MOSFET thiab transistor
1. Qhov chaw s, rooj vag g, thiab ntws d ntawm lub MOSFET sib haum mus rau lub emitter e, puag b, thiab collector c ntawm lub transistor feem. Lawv cov haujlwm zoo ib yam.
2. MOSFET yog ib qho khoom siv hluav taws xob tswj tam sim no, iD yog tswj los ntawm vGS, thiab nws cov amplification coefficient gm feem ntau me me, yog li lub peev xwm amplification ntawm MOSFET tsis zoo; lub transistor yog cov cuab yeej tswj tam sim no, thiab iC yog tswj los ntawm iB (los yog iE).
3. Lub rooj vag MOSFET rub yuav luag tsis muaj tam sim no (ig»0); thaum lub hauv paus ntawm transistor ib txwm kos ib qho tam sim no thaum lub transistor ua haujlwm. Yog li ntawd, lub rooj vag input kuj ntawm MOSFET yog siab tshaj qhov input tsis kam ntawm lub transistor.
4. MOSFET yog tsim los ntawm multicarriers koom nrog hauv kev coj ua; Transistors muaj ob tus neeg nqa khoom, multicarriers thiab cov neeg nqa khoom tsawg, koom nrog kev coj ua. Qhov concentration ntawm cov neeg nqa khoom tsawg feem ntau cuam tshuam los ntawm yam xws li kub thiab hluav taws xob. Yog li, MOSFETs muaj qhov kub thiab txias zoo dua thiab muaj zog tiv thaiv hluav taws xob ntau dua li cov transistors. MOSFETs yuav tsum siv qhov chaw ib puag ncig (kub, thiab lwm yam) sib txawv heev.
5. Thaum lub hauv paus hlau thiab lub substrate ntawm MOSFET txuas ua ke, qhov chaw thiab cov dej ntws tuaj yeem siv sib hloov, thiab cov yam ntxwv hloov me ntsis; thaum thaum lub collector thiab emitter ntawm lub triode siv interchangeably, cov yam ntxwv txawv heev. Tus nqi β yuav raug txo kom ntau.
6. Lub suab coefficient ntawm MOSFET tsawg heev. MOSFET yuav tsum tau siv ntau li ntau tau nyob rau hauv theem input ntawm lub suab nrov nrov amplifier circuits thiab circuits uas yuav tsum tau ib tug high signal-rau-suab piv piv.
7. Ob leeg MOSFET thiab transistor tuaj yeem tsim ntau yam amplifier circuits thiab switching circuits, tab sis yav tas los muaj cov txheej txheem tsim khoom yooj yim thiab muaj qhov zoo ntawm kev siv hluav taws xob tsawg, zoo thermal stability, thiab dav siv hluav taws xob siv hluav taws xob ntau. Yog li ntawd, nws yog dav siv nyob rau hauv loj-scale thiab loj-scale integrated circuits.
8. Lub transistor muaj ib tug loj on-resistance, thaum lub MOSFET muaj ib tug me me on-resistance, tsuas yog ob peb puas mΩ. Hauv cov khoom siv hluav taws xob tam sim no, MOSFETs feem ntau yog siv los ua cov keyboards, thiab lawv cov kev ua tau zoo yog qhov siab.
WINSOK SOT-323 encapsulation MOSFET
MOSFET vs. Bipolar Transistor
MOSFET yog cov khoom siv hluav taws xob tswj hluav taws xob, thiab lub rooj vag siv lub hauv paus tsis muaj tam sim no, thaum lub transistor yog cov cuab yeej tswj tam sim no, thiab lub hauv paus yuav tsum siv qee qhov tam sim no. Yog li ntawd, thaum lub ntsuas tam sim no ntawm lub teeb liab qhov chaw me me, MOSFET yuav tsum tau siv.
MOSFET yog tus neeg nqa khoom ntau tus neeg nqa khoom, thaum ob tus neeg nqa khoom ntawm lub transistor koom nrog hauv kev coj ua. Txij li thaum lub concentration ntawm cov neeg nqa khoom tsawg yog rhiab heev rau lwm yam kev mob xws li kub thiab hluav taws xob, MOSFET yog qhov tsim nyog rau cov xwm txheej uas ib puag ncig hloov pauv zoo heev.
Ntxiv rau kev siv los ua cov khoom siv amplifier thiab cov keyboards tswj tau zoo li cov transistors, MOSFETs kuj tseem siv tau los ua qhov sib txawv ntawm cov kab hluav taws xob sib txawv.
Lub hauv paus thiab ntws ntawm MOSFET yog qhov sib luag hauv cov qauv thiab tuaj yeem siv sib hloov. Lub rooj vag-qhov voltage ntawm depletion hom MOSFET tuaj yeem ua tau zoo lossis tsis zoo. Yog li ntawd, siv MOSFETs yog hloov tau ntau dua li transistors.
Post lub sij hawm: Oct-13-2023
